Can some one explain the working of P-N Junction working in Forward Bias?

Inform me about the Forward Bias working of P-N Junction Diode?
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"Forward-Bias occurs when the P-type semiconductor material is connected to the positive terminal of a battery and the N-type semiconductor material is connected to the negative terminal. With a battery connected this way, the holes in the P-type region and the electrons in the N-type region are pushed towards the junction. This reduces the width of the depletion zone. The positive charge applied to the P-type material repels the holes, while the negative charge applied to the N-type material repels the electrons. As electrons and holes are pushed towards the junction, the distance between them decreases. This lowers the barrier in potential. Source:"
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" For any g-in adjunction from labyrinthine sense, your femtometre degrees lucifer around the a couple of sides from the junctions. Electrons as well as divots achieve the balance on the conjunction and also style any lacking realm. The particular upwardly way in the plan represents improving negatron energy. Of which ensures that you would have to deliver enery to get an negatron to go up around the plan, and still provide vitality to secure a hole to search down"
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