"Connecting the P-type region to the negative terminal of the battery and the N-type region to the positive terminal, produces the Reverse- Bias effect. Because the P-type material is now connected to the negative terminal of the power supply, the ‘holes’ in the P-type material are pulled away from the junction, causing the width of the depletion zone to increase. Similarly, because the N-type region is connected to the positive terminal, the electrons will also be pulled away from the junction. Therefore, the depletion region widens, and does so increasingly with increasing reverse-bias voltage. This increases the voltage barrier causing a high resistance to the flow of charge carriers thus allowing minimal electric current to cross the p-n junction. Source: http://in.docsity.com/en-docs/Fundamentals_of_Information_Technology__Lecture_Notes__Elveera_Miranda"
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The p–in junction is often a bound as well as screen among 2 kinds of semiconducting material product, r-form in addition to n-variety, in the individual watch crystal connected with semiconducting material. It's manufactured by doping, for example through ion implantation, diffusion involving dopants, or even by simply epitaxy (growing any covering of gem drugged having one sort of dopant on top of A covering involving ravenscroft narcotized with yet another kind of dopant). In the event that a pair of independent items of substance were utilized, this would introduce the almond edge between the semiconductors in which seriously stops its power aside scatter the electrons in addition to divots.
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