"What is a P-N Junction Diode? Explain its working in Forward and Reverse Bias."

Do you know something about the P-N Junction Diode? If you, explain it in forward and Reverse Bias working?

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"A P-N Junction is formed by combining P-type and N-type semiconductors together in very close contact. Creating a semiconductor from two separate pieces of material introduces a grain boundary between them which would severely inhibit its utility by scattering the electrons and holes. The term junction refers to the region where the two regions of the semiconductors meet. In a p-n junction, without an external applied voltage, an equilibrium condition is reached in which a potential difference is formed across the junction. This potential difference is called built-in potential Vbi. Forward-Bias occurs when the P-type semiconductor material is connected to the positive terminal of a battery and the N-type semiconductor material is connected to the negative terminal. With a battery connected this way, the holes in the P-type region and the electrons in the N-type region are pushed towards the junction. This reduces the width of the depletion zone. The positive charge applied to the P-type material repels the holes, while the negative charge applied to the N-type material repels the electrons. As electrons and holes are pushed towards the junction, the distance between them decreases. This lowers the barrier in potential. Connecting the P-type region to the negative terminal of the battery and the N-type region to the positive terminal, produces the Reverse- Bias effect. Because the P-type material is now connected to the negative terminal of the power supply, the ‘holes’ in the P-type material are pulled away from the junction, causing the width of the depletion zone to increase. Similarly, because the N-type region is connected to the positive terminal, the electrons will also be pulled away from the junction. Therefore, the depletion region widens, and does so increasingly with increasing reverse-bias voltage. This increases the voltage barrier causing a high resistance to the flow of charge carriers thus allowing minimal electric current to cross the p-n junction. Source:"

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Any p–n conjunction is created with the bounds from a w-kind in addition to d-variety semiconducting material designed within a gem involving semiconductor device through doping, e.g. by simply ion nidation, dispersal of dopants, or even simply by epitaxy (expanding A stratum associated with very narcotized together with wedding party dopant along with the covering of very doped along with another kind of dopant)

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