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2N2222 Low Power Bipolar Transistors

Page 1 06/04/06 V1.0

Features: • NPN Silicon Planar Switching Transistors. • Switching and Linear application DC and VHF Amplifier applications.

TO-18 Metal Can Package

Dimensions Minimum Maximum

A 5.24 5.84

B 4.52 4.97

C 4.31 5.33

D 0.40 0.53

E - 0.76

F - 1.27

G - 2.97

H 0.91 1.17

J 0.71 1.21

K 12.70 -

L 45° Dimensions : Millimetres

Pin Configuration: 1. Emitter 2. Base 3. Collector

2N2222 Low Power Bipolar Transistors

Page 2 06/04/06 V1.0

Absolute Maximum Ratings (Ta = 25°C unless specified otherwise)

Description Symbol 2N2222 Unit

Collector Emitter Voltage VCEO 30

VCollector Base Voltage VCBO 60

Emitter Base Voltage VEBO 5

Collector Current Continuous IC 800 mA

Power Dissipation at Ta = 25°C Derate above 25°C PD

500 2.28

mW mW/°C

Power Dissipation at TC = 25°C Derate above 25°C

1.2 6.85

W mW/°C

Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C

Electrical Characteristics (Ta = 25°C unless specified otherwise)

Description Symbol Test Condition Value

Unit Minimum Maximum

Collector Emitter Breakdown Voltage BVCEO IC = 10mA, IB = 0 30 -

VCollector Base Breakdown Voltage BVCBO IC = 10µA, IE = 0 60 -

Emitter Base Breakdown Voltage VEBOf IE = 10µA, IC = 0 5 -

Collector Leakage Current ICBO

VCB = 50V, IE = 0

VCB = 50V, IE = 0 Ta = 150°C

- 10

10

nA

µA

Collector Emitter Saturation Voltage *VCE (Sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA

- 0.41.6 V

Base Emitter Saturation Voltage *VBE (Sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA

0.6 1.32.6

2N2222 Low Power Bipolar Transistors

Page 3 06/04/06 V1.0

Electrical Characteristics (Ta = 25°C unless specified otherwise)

Parameter Symbol Test Condition 2N2222 Unit

Minimum Maximum

DC Current Gain hFE

IC = 0.1mA, VCE = 10V* IC = 1mA, VCE = 10V

IC = 10mA, VCE = 10V* IC = 150mA, VCE = 1V* IC = 150mA, VCE = 1V*

IC = 500mA, VCE = 10V*

35 50 75 50

100 30

300 -

Dynamic Characteristics

Transition Frequency ft IC = 20mA, VCE = 20V

f = 100MHz 250 - MHz

Output Capacitance Cob VCB = 10V, IE = 0

f = 100kHz - 8

pF Input Capacitance Cib

VEB = 0.5V, IC = 0 f = 100kHz

- 30

Switching Characteristics

Delay Time td IC = 150mA,IB1 = 15mA - 10

ns Rise Time tr VCC = 30V, VBE (off) = 0.5V - 25

Storage Time ts IC = 150mA, IB1 = 15mA - 225

Fall Time tf IB2 = 15mA, VCC = 30V - 60

*Pulse Condition: Pulse Width ≤300µs, Duty Cycle ≤2%.

Package Part Number

TO-18 2N2222

Part Number Table

For enquiries from all other markets

2N2222 Low Power Bipolar Transistors

Page 4 06/04/06 V1.0

Notes:

International Sales Offices:

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