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7.178.096 2 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N3905 AND 2N3906 ARE PNP SILICON CASE TO-92A PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, .SATURATED- SWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLEMENTARY TO 2N3903 AND 2N3904 RESPECTIV&LY. EBC ABSOLUTE MAXIMUM RATINGS [For oo aevices, voltage and curren velués are negative. Collector-Base Voltage Veso 40V Collector-Emitter Voltage VcEO -40V Emitter-Base Voltage VERO 5v ; Collector Current Ic 200nA Total Power Dissipation @ Taz25°C Pot 360n" @ Te=25°C Ww Operating Junction & Storage Temperature Ty, Tetg -55 to +150°C on i 3 | EMECTRICAL CHARACTERISTICS AT Ta=25°C ; 2N3905 2N3906 5 | PARAMETER SYMBOL |iqy wax! MIN MAX UNIT | TEST CONDITIONS _ 4 Collector-Base Breakdown BYCBO 40 40 v ~Ic=l6pA Ig=0 | Voltage Collector-Enitter Breakdown EVcHo* | 40 40 v -Ic=lmA = Tp=O Voltage Emitter-Base Breakdown Voltage | -BVERO 5 5 v ~In=10pa Ic¢=0’ Collector Cutoff Current -IcEV 50 50 | nA VCE=30V .VEB=3V Base Cutoff Current IBEV 50 50 | nA Vog=30V .Vegq3¥ x Collector-Emitter Saturation Veu(saT) 0.25 6.25 | V Ic=10m4 ..FR=10A Voltage 0.4 0.4/ ¥ Ig=50mA .-1p=5mA Base-Emitter Saturation Voltage VpE(SAT 65 0.85 (0.65 0.85 | V Ic=10mA . Ip=imA 0.95 0.95 | V Ic=50wA _-Ip=5iad D.C, Current Gain Hyp * 30 60. Ig=0.lmA .VCE=1V 40 80 Ic¢=Ima .Vceg=1V 50 150; 160 300 |-Ic=1Omé .VoR=1V 30 60 Ig=50mA . Vog=1V i ~~ 15 30 Ic=100mA -VoR=1V : i. : * Pulse Test : Pulse Width-0.3mS, Duty Cycle=1%. 4 P.T.0. - 1 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX «3510 MICRO ELECTRONICS LTD. KWUN TONG P. 9. BOKés477 CABLE ADDRESS ne eee : FAX: 3-410321 _ a 
