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Digital Integrated Circuit Technology: Process Procedure for 2µm CMOS Circuit, Assignments of Electrical and Electronics Engineering

University of Michigan (UM) - Ann ArborElectrical and Electronics Engineering

The process procedure for creating a 2µm cmos circuit, including steps for starting wafers, punch-through implant, well drive-in, pad oxidation/nitride deposition, locos oxidation, nitride removal, sacrificial oxide, capacitor formation, and testing. The document also includes details on various implants, oxidations, and cleanings.

Typology: Assignments

Pre 2010

Uploaded on 09/02/2009

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EECS 523 Digital Integrated Circuit Technology Winter 2007
M. S. McCorquodale, University of Michigan February 6, 2007
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CMOS Process
2µm, P-well, double poly-Si, single metal (2P1M)
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0.0 Starting wafers: 8-12ohm-cm, n-type, <100>
Control wafers: PWELL (n-type), PCH (n-type)
Scribe lot and wafer number on each wafer, including
controls.
Measure bulk resistivity (ohm-cm) of PWELL.
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1.0 Initial Oxidation: target = 1000(+/-5%)A
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1.1 TCA clean furnace tube.
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1.2 Std. clean wafers, include PWELL and PCH.
Std. clean: piranha clean, DI rinse, BHF dip, spin-
dry.
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1.3 Wet oxidation at 1000C (SWETOXB):
5min. dry O2
9.5min. wet O2
5min. dry O2
20min. dry N2
Measure tox = ***
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2.0 Punch-Through Implant
Blanket implant: Phosphorus, 145keV, 1.2E12cm-2
lnclude PWELL and PCH.
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3.0 Well Photo Mask:
Control wafers are not included in any photoresist step.
(PWELL proceeds to Step 4.0, PCH to Step 5.4)
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3.1 Std. clean wafers.
Dehydrate wafers in oven for >30min. at 120C.
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3.2 Std. I-Line process:
Spin, expose, develop, inspect, descum, hard bake.
No etch. Resist is left on wafers.
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4.0 Well Implant: Boron (B11), 3E12cm-2, 80keV.
Include PWELL.
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5.0 Well Drive-In: target xj = ***, tox = 3500A
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5.1 TCA clean furnace tube.
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5.2 Etch pattern into oxide in 5/1 BHF.
Strip oxide off of PWELL.
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5.3 Remove PR in O2 plasma.
Piranha clean wfrs.
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5.4 Std. clean wfrs in include PWELL and PCH.
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5.5 (a) Well drive-in at 1150C (WELLDR):
4 hrs dry O2
5 hrs dry N2
(b) Measure oxide thickness on work wafer.
Measure two points on three wafers from
different locations on the boat: front, middle and
rear.
tox(well) = *** tox(outside of well) = ***
(c) Strip oxide and measure Rs on PWELL and
PCH.
RsPWELL = *** RsPCH = ***
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5.6 TCA clean the furnace tube after well drive-in is
done.
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6.0 Pad Oxidation/Nitride Deposition:
target = 300A SiO2 + 1000A Si3N4
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6.1 TCA clean furnace tube.
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6.2 Etch oxide in 5/1 BHF until wafers dewet.
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6.3 Std. clean wafers.
Include a tox monitoring wafer, PWELL and PCH. .
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6.4 Dry oxidation at 950C (SGATEOX):
1hr. dry O2
20min. dry N2 anneal.
Measure tox on monitoring wafer. tox = ***
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6.5 Deposit 1000A of Si3N4 immediately (SNITC):
Include PWELL and PCH.
Approx time = 23min., temp.= 800C.
Measure nitride thickness on 3 work wafers, using
tox obtained in 6.4.
PWELL and PCH proceed to Step 13.3.
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7.0 Active Area Photo Mask:
Std. KTI process.
Offset: x = 3.2420, y = 0.6155.
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8.0 Nitride Etch:
Plasma etch.
Measure tox on each work wafer.
Do not remove PR. Inspect.
Measure PR thickness covering active area. tpr = ***
PR must be >8kA. Hard bake again for >2hrs. at 120C.
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9.0 P-Field Photo Mask: (basically, the pwell mask)
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9.1 Std. KTI process. (Second photo)
Inspect! Inside well, field is open and active areas
are covered with Si3N4 and PR.
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9.2 Measure PR thickness on active area.
Wafers cannot be passed unless PR is >8kA.
tpr = ***
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10.0 P-Field (Channel Stop) Ion implant:
B11, 100keV, 1E13cm-2
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11.0 N-Field Photo Mask: (inverse of the pwell mask)
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11.1 Remove PR in O2 plasma. Piranha clean wfrs.
Dehydrate wfrs in oven for >30min. at 120C.
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11.2 Std. I-Line process.
Well area is covered with PR, active area with
Si3N4.
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12.0 N-Field (Channel Stop) Ion Implant:
Phosphorus, 40keV, 5E12cm-2.
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13.0 Locos Oxidation: target = ***
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13.1 TCA clean furnace tube.
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Download Digital Integrated Circuit Technology: Process Procedure for 2µm CMOS Circuit and more Assignments Electrical and Electronics Engineering in PDF only on Docsity!

CMOS Process 2 μm, P-well, double poly-Si, single metal (2P1M)

0.0 Starting wafers: 8-12ohm-cm, n-type, <100> Control wafers: PWELL (n-type), PCH (n-type) Scribe lot and wafer number on each wafer, including controls. Measure bulk resistivity (ohm-cm) of PWELL.

1.0 Initial Oxidation: target = 1000(+/-5%)A

1.1 TCA clean furnace tube. 
1.2 Std. clean wafers, include PWELL and PCH. Std. clean: piranha clean, DI rinse, BHF dip, spin- dry. 
1.3 Wet oxidation at 1000C (SWETOXB): 5min. dry O 9.5min. wet O 5min. dry O 20min. dry N Measure tox = ***

2.0 Punch-Through Implant Blanket implant: Phosphorus, 145keV, 1.2E12cm- lnclude PWELL and PCH.

3.0 Well Photo Mask: Control wafers are not included in any photoresist step. (PWELL proceeds to Step 4.0, PCH to Step 5.4)

3.1 Std. clean wafers. Dehydrate wafers in oven for >30min. at 120C. 
3.2 Std. I-Line process: Spin, expose, develop, inspect, descum, hard bake. No etch. Resist is left on wafers.

4.0 Well Implant: Boron (B11), 3E12cm-2, 80keV. Include PWELL.

5.0 Well Drive-In: target xj = ***, tox = 3500A

5.1 TCA clean furnace tube. 
5.2 Etch pattern into oxide in 5/1 BHF. Strip oxide off of PWELL. 
5.3 Remove PR in O2 plasma. Piranha clean wfrs. 
5.4 Std. clean wfrs in include PWELL and PCH. 
5.5 (a) Well drive-in at 1150C (WELLDR): 4 hrs dry O 5 hrs dry N (b) Measure oxide thickness on work wafer. Measure two points on three wafers from different locations on the boat: front, middle and rear. tox(well) = *** tox(outside of well) = *** (c) Strip oxide and measure Rs on PWELL and PCH. RsPWELL = *** RsPCH = ***

5.6 TCA clean the furnace tube after well drive-in is done.

6.0 Pad Oxidation/Nitride Deposition: target = 300A SiO2 + 1000A Si3N

6.1 TCA clean furnace tube. 
6.2 Etch oxide in 5/1 BHF until wafers dewet. 
6.3 Std. clean wafers. Include a tox monitoring wafer, PWELL and PCH.. 
6.4 Dry oxidation at 950C (SGATEOX): 1hr. dry O 20min. dry N2 anneal. Measure tox on monitoring wafer. tox = *** 
6.5 Deposit 1000A of Si3N4 immediately (SNITC): Include PWELL and PCH. Approx time = 23min., temp.= 800C. Measure nitride thickness on 3 work wafers, using tox obtained in 6.4. PWELL and PCH proceed to Step 13.3.

7.0 Active Area Photo Mask: Std. KTI process. Offset: x = 3.2420, y = 0.6155.

8.0 Nitride Etch: Plasma etch. Measure tox on each work wafer. Do not remove PR. Inspect. Measure PR thickness covering active area. tpr = *** PR must be >8kA. Hard bake again for >2hrs. at 120C.

9.0 P-Field Photo Mask: (basically, the pwell mask)

9.1 Std. KTI process. (Second photo) Inspect! Inside well, field is open and active areas are covered with Si3N4 and PR. 
9.2 Measure PR thickness on active area. Wafers cannot be passed unless PR is >8kA. tpr = ***

10.0 P-Field (Channel Stop) Ion implant: B11, 100keV, 1E13cm-

11.0 N-Field Photo Mask: (inverse of the pwell mask)

11.1 Remove PR in O2 plasma. Piranha clean wfrs. Dehydrate wfrs in oven for >30min. at 120C. 
11.2 Std. I-Line process. Well area is covered with PR, active area with Si3N4.

12.0 N-Field (Channel Stop) Ion Implant: Phosphorus, 40keV, 5E12cm-2.

13.0 Locos Oxidation: target = ***

13.1 TCA clean furnace tube.

13.2 Remove PR in O2 plasma. Piranha clean wfrs.

13.3 Std. clean wfrs include PWELL and PCH. Dip in 10/1 BHF until field area dewets. 
13.4 Wet oxidation at 950C (SWETOXB): 5min. dry O 4hrs. 40 min wet O 5min. dry O 20min. N2 anneal Measure tox on 3 work wfrs. tox.= ***

14.0 Nitride Removal

14.1 Dip in 5/1 BHF for 30sec., include PWELL and PCH. (To remove thin oxide on top of the nitride) 
14.2 Etch nitride off in phosphoric acid at 145C.

15.0 Sacrificial Oxide: target = 200(+/-20)A

15.1 TCA clean furnace tube. 
15.2 Std. clean wfrs, include PWELL and PCH. Dip in 10:1 BHF until PWELL and PCH dewet. 
15.3 Dry oxidation at 950C (SGATEOX): 30min. dry O 20min. N2 anneal Measure tox on 3 wfrs. tox = ***

16.0 Threshold Implant: Blanket implant: B11, 30keV, 9E11cm-2.

17.0 Gate Oxidation/Poly-Si Deposition:

17.1 TCA clean fumace tube. 
17.2 Std. clean wfrs, include PWELL, PCH and, 3 tox and 1 tpoly1 monitoring wafers. 
17.3 Dip off sacrificial oxide in 10/1 H20/HF until PWELL and PCH dewet (approx. 1min.). 
17.4 Dry oxidation at 950C (SGATEOX): 2hr. dry O 20min. N2 anneal Measure 5 pts. on each of the 3 tox monitoring wafers. tox = *** 
17.5 Immediately after oxidation deposit 4500A phosphorous doped poly-Si (SDOPOLYH). approx.time = 2hr. 40min., temp. = 610C Include tpoly1, PWELL and PCH. tpoly1 = *** Measure 5 pts.. PWELL and PCH proceed to Step 20.2.

18.0 Gate Definition Mask: Std. I-Line process.

19.0 Plasma etch poly-Si

19.1 Etch poly. (CCl4/He/O2 at 300W, 280mT) 
19.2 Measure tox. in S/D area of each work wafer.

19.3 Remove PR in plasma O2. Piranha clean wfrs. Measure line width of 2μm gates on each work wafer. One pt. measurement in 19.2 and 19.3.

20.0 Capacitor formation: Target = *** SiO2 on 1st poly + 4500A 2nd poly

20.1 TCA clean furnace tube. 
20.2 Std. clean wafers, include PWELL, PCH, tpoly1 and one of gate oxidation monitoring wafers as a 2nd poly monitoring wafer, tpoly2. tpoly2 proceeds to Step 20.4. From here on: only 10sec. dip in 25/1 H2O/HF after piranha. 
20.3 Dry Oxidation at 950C (SDRYOXB): 55min. dry O 20min. N2 anneal. Measure oxide thickness on poly tox(PWELL) = *** tox(PCH) = *** PWELL proceeds to Step 24. PCH proceeds to Step 25. 
20.4 Second poly-Si deposition: immediately after oxidation deposit 4500A of phosphorus doped poly- Si (SDOPOLYH): approx time = 2hr. 30min., temp.= 610C. tpoly2 = ***

21.0 Capacitor Photo Mask: Std. I-Line process.

22.0 Plasma etch poly-Si:

22.1 Etch 2nd poly. Inspect. 
22.2 Measure tox. in S/D area on each work wafer. 
22.3 Remove PR in O2 plasma. Piranha clean wfrs. Dehydrate wfrs in oven for >30min. at 120C. 
22.4 Measure channel length. This measurement can be done at any step before Step 28.

23.0 N+ S/D Photo Mask: (inverse of p+ S/D) Std. I-line process. Do not hard bake. Inspect. PMOS areas are PR covered. Capacitor areas are not.

24.0 N+ S/D Implant: Arsenic, 160keV, 5E15cm-2, incl. PWELL.

25.0 N+ S/D Anneal

25.1 TCA clean furnace tube. 
25.2 Remove PR in O2 plasma and piranha clean wafers (no dip here). 
25.3 Std. clean wafers, incl. PWELL and PCH. 
25.4 Anneal in N2 at 925C for 1hr. 15min. (N2ANNEAL).