Cork Institute of Technology
Higher Certificate in Engineering in Electronic Engineering - Stage 1
(NFQ - Level 6)
Autumn 2006
Analogue Electronics
(Time: 3 Hours)
Answer Question 1 [40 marks] and any
three other questions [each 20 marks]
Examiners: Mr. M. O’Gorman
Mr. D. O’Mahony
Mr. J. Berry
Dr. R. O Dubhghaill
1. (a) Briefly distinguish between avalanche breakdown and zener breakdown in a
reverse-biased pn-junction. [5 marks]
(b) Explain the term dynamic resistance when applied to a forward-biased diode. [5 marks]
(c) Outline briefly the difference between drift current and diffusion current. [5 marks]
(d) Show how the maximum power dissipation curve for a transistor may be drawn
on the transistor’s output characteristics.
Illustrate the direction of curve displacement if the ambient operating
temperature of the device is to be increased. [5 marks]
(e) What is meant by donor doping and acceptor doping?
Explain how the conductivity of a semiconductor material may be improved by
either of the above processes. [5 marks]
(f) Draw a sketch of the electromagnetic spectrum showing the main regions into
which electromagnetic waves of different frequencies are allocated. [5 marks]
(g) Explain what is meant by the frequency response of an amplifier.
Outline the characteristics of an amplifier which may be ascertained from the
plot of such a response. [5 marks]
(h) Briefly explain what is meant by the frequency spectrum of a complex signal.
Sketch the frequency spectrum of a square wave. [5 marks]
