BASIC ELECTRONICS ENGINEERING (BE01000111)
A Laboratory Manual for
Basic Electronics Engineering
(BE01000111)
B.E. Semester 1 & 2
Directorate of Technical Education, Gandhinagar,
Gujarat
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Basic Electronics Engineering Practical Experiments, Study Guides, Projects, Research of Electrical Engineering
A series of practical experiments for a basic electronics engineering course. It covers topics such as diode circuits, bjt and fet biasing, small signal analysis, and special-purpose diodes. The experiments include v-i characteristics of diodes, half-wave and full-wave rectifiers, clipper and clamper circuits, and bjt characteristics. Students are expected to develop competencies in understanding circuit configurations, observing waveforms, and measuring circuit parameters. The document also includes suggested references and a scoring system for evaluating student performance.
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A Laboratory Manual for
Basic Electronics Engineering
(BE01000111)
B.E. Semester 1 & 2
Directorate of Technical Education, Gandhinagar,
Gujarat
Government engineering college,
Patan
Certificate
This is to certify that Mr./Ms. CHAUDHARY NAVINKUMAR BABUHAI
Enrollment No. _______________ of B.E. Semester. I from department of this
Institute (GTU Code: ) has satisfactorily completed the Practical work for
the subject Basic Electronics Engineering (BE01000111) for the academic year
Place: __________
Date: __________
Name and Sign of Faculty member
Head of the Department
Practical – Course Outcome matrix Course Outcomes (COs): CO-1 : Analyze the general – and special-Purpose diode circuits CO-2 : Design biasing circuits for BJT and FET CO-3 : Analyze BJT circuits in small signal domain CO-4 : Analyze FET circuits for DC voltages and currents CO-5 : Understand usage of Special Purpose Diodes Sr. No. Objective(s) of Experiment CO1^ CO2^ CO3^ CO4^ CO 1 To obtain V-I characteristics of P-N junction diode and Zener diode. 2 To observe waveform at the output of half wave rectifier & full wave rectifier with and without capacitor filter. 3 To observe waveform at the output of bridge rectifier with and without capacitor filter. 4 To construct clipper & clamper circuits and to observe waveforms at the output. 5 To obtain common emitter (CE) characteristics of NPN transistor 6 To obtain common base (CB) characteristics of NPN transistor
7 To obtain common collector (CC) characteristics of NPN transistor 8 To understand the working of transistor as a switch. To draw DC load line for given circuit. 9 To design common emitter (CE) amplifiers and construct circuits on breadboard. Measure its voltage & current gain at different frequencies and plot frequency response. 10 To obtain characteristics of field effect transistor (FET) 11 To obtain & measure characteristics of LED. 12 To understand the working of Seven segment LED operation. 13 To test individual circuit prepared by the student (Project based on design of a small circuit with input and output signal observations on CRO).
Common Safety Instructions
- Students must obey the safety instructions during laboratory sessions.
- Keep the working area neat and clean to access the instruments.
- Students should follow the instructions given by Lab assistant / Lab technicians and Faculty while performing practical.
- Be careful while operating on equipment it is expected that more than one student or lab assistant or faculty should remain present at the time of practical performance.
- Always make circuit connections or changes after switching off the supply for the circuits/Kits.
- Keep the resources in their designated space after the completion of practical
Index (Progressive
Assessment Sheet)
Sr. No. Objective(s) of Experiment Page No. Date of performance Date of submission Assessment Marks Sign. of Teacher with date 1 To obtain V-I characteristics of P-N junction diode and Zener diode. 2 To observe waveform at the output of half wave rectifier & full wave rectifier with and without capacitor filter. 3 To observe waveform at the output of bridge rectifier with and without capacitor filter. 4 To construct clipper & clamper circuits and to observe waveforms at the output. 5 To obtain common emitter (CE) characteristics of NPN transistor 6 To obtain common base (CB) characteristics of NPN transistor 7 To obtain common collector (CC) characteristics of NPN transistor
Experiment No: 1
Obtain V-I characteristic of P-N junction Diode and Zener Diode.
Date: Competency and Practical Skills: After this practical students are expected to develop following competencies and skills ,
- Proper understanding of Diode functioning
- Knowledge of V-I characteristics of Diode
- Practical hands and observation of diode voltages and current. Relevant CO: CO-1 : Analyze the general – and special-Purpose diode circuits Objectives: 1) To perform an Experiment to Study forward bias and reverse bias characteristics of P-N Junction Diode and zener diode.
- Observe and calculate diode voltages and current Equipment/Instruments: Trainer kit, Power supply, Patch cords, Digital Multimeters, PN junction Diode ,Zener Diode, Resistors , bread board, Connectors [A] PN Junction Diode: Theory: Donor impurities (pentavalent) are introduced into one-side and acceptor impurities into the other side of a single crystal of an intrinsic semiconductor to form a p-n diode with a junction called depletion region (this region is depleted off the charge carriers). This region gives rise to a potential barrier called Cut-in Voltage. This is the voltage across the diode at which it starts conducting. The PN junction can conduct beyond this potential. Forward bias : The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is connected to anode (P-side) and – ve terminal of the input supply is connected the cathode. Then diode is said to be forward biased. In this condition the height of the potential barrier at the junction is lowered by an amount equal to given forward biasing voltage. Both the holes from p-side and electrons from n-side cross the junction simultaneously and constitute a forward current from n-side (injected minority current – due to holes crossing the junction and entering P- side of the diode). Assuming current flowing through the diode to be very large, the diode can be approximated as short- circuited switch. Reverse bias:
If – ve terminal of the input supply is connected to anode (p-side) and +ve terminal of the input supply is connected to cathode (n-side) then the diode is said to be reverse biased. In this condition an amount equal to reverse biasing voltage increases the height of the potential barrier at the junction. Both the holes on P-side and electrons on N-side tend to move away from the junction there by increasing the depleted region. However the process cannot continue indefinitely, thus a small current called reverse saturation current continues to flow in the diode. This current is negligible hence the diode can be approximated as an open circuited switch. Circuit diagram: Fig. 1: Forward Bias Condition Fig. 2: Reverse Bias Condition Safety and necessary Precautions:
- While doing the experiment do not exceed the readings of the diode. This may lead to damaging of the diode.
- Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
Sr. No. Input voltage Vi (volt) Forward Voltage VD (volt) Forward Current I (^) D (mA)
Reverse Bias: Sr. No. Input voltage Vi (volt) Reverse Voltage VR (volt) Reverse Current IR ( 𝒖 A)
Calculation: Results: Cut in Voltage = _______________V Reverse Breakdown Voltage = _____________V Static Forward Resistance = ______________Ω Dynamic Forward Resistance = _____________Ω Static Reverse Resistance = ______________Ω Dynamic Reverse Resistance = _____________Ω [B] Zener Diode: Theory: Zener diode is a heavily doped Silicon diode. An ideal P-N junction diode does not conduct in reverse biased condition. A Zener diode conducts excellently even in reverse biased conditions. These diodes operate at a precise value of voltage called break down voltage. A Zener diode when forward biased behaves like an ordinary P-N junction diode. A Zener diode where reverse biased can undergo avalanche break down or Zener break down. Avalanche Break down: If both p-side and n-side of the diode are lightly doped, depletion region at the junction widens. Application of a very large electric field at the junction increases the kinetic energy of the charge carriers which collides with the adjacent atoms and generates charge carriers by breaking the bond, they in-turn collide with other atoms by creating new charge carriers, which is cumulative which results in the generation of large current resulting in Avalanche Breakdown. Zener Break down: If both p-side and n-side of the diode are heavily doped, depletion region at the junction reduces, it leads to the development of strong electric field and application of even a small voltage at the junction
may rupture covalent bond and generate large number of charge carriers. Such a sudden increase in the number of charge carriers results in Zener breakdown. Circuit Diagram: Fig. 3 : Forward Bias Condition Fig. 4: Reverse Bias Condition Safety and necessary Precautions:
- While doing the experiment do not exceed the readings of the diode. This may lead to damaging of the diode.
- Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
- Do not switch ON the power supply unless you have checked the circuit connections as per the circuit diagram. Procedure: Forward Bias Condition:
Reverse Bias: Sr. No. Input voltage Vi (volt) Reverse Voltage VR (volt) Reverse Current IR ( 𝒖 A)