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Questions related to pn junction diode and its applications
Typology: Exams
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Unit – 1 : PN junction diode
Introduction of Semiconductor Materials Semiconductor Diode: Depletion layer, V-I
characteristics, ideal and practical, diode resistance, capacitance, Diode Equivalent Circuits,
Transition and Diffusion Capacitance, capacitance, Zener Diodes breakdown mechanism
(Zener and avalanche) Diode Application: Series , Parallel and Series, Parallel Diode
Configuration, Half and Full Wave rectification, Clippers, Clampers, Zener diode as shunt
regulator, Voltage-Multiplier Circuits Special Purpose two terminal Devices : Light-Emitting
Diodes, Varactor (Varicap) Diodes, Tunnel Diodes, Liquid-Crystal Displays.
Unit – 2 : Bipolar Junction Transistors and Field Effect Transistor
Bipolar Junction Transistor: Transistor Construction, Operation, Amplification action.
Common Base, Common Emitter, and Common Collector Configuration DC Biasing BJTs:
Operating Point, Fixed-Bias, Emitter Bias, Voltage-Divider Bias Configuration. Collector
Feedback, Emitter-Follower Configuration. Bias Stabilization. CE, CB, CC amplifiers and AC
analysis of single stage CE amplifier (re Model). Field Effect Transistor: Construction and
Characteristic of JFETs. AC analysis of CS amplifier, MOSFET (Depletion and
Enhancement) Type, Transfer analysis of CS amplifier, MOSFET (Depletion and
Enhancement) Type, Transfer Characteristic.
Unit – 3 : Operational Amplifiers
Introduction and Block diagram of Op Amp, Ideal & Practical characteristics of Op Amp,
Differential amplifier circuits, Practical Op-Amp Circuits (Inverting Amplifier, Non inverting
Amplifier, Unity Gain Amplifier, Summing Amplifier, Integrator, and Differentiator). OPAMP
Parameters: Input offset voltage, Output offset voltage, Input biased current, and Input offset
current Differential and Common-Mode Operation.
Unit – 4 : Electronic Instrumentation and Measurements
Digital Voltmeter : Introduction, RAMP Techniques Digital Multimeters : Introduction
Oscilloscope: Introduction, Basic Principle, CRT , Block Diagram of Oscilloscope, Simple
CRO, Measurement of voltage, current phase and frequency using CRO, Introduction of
Digital Storage Oscilloscope and Comparison of DSO with Analog Oscilloscope.
Unit – 5 : Fundamentals of Communication Engineering
Elements of a Communication System, Need of Modulation, Electromagnetic spectrum and
typical applications. Basics of Signal Representation and Analysis, Introduction of various
analog modulation techniques, Fundamentals of amplitude modulation, Modulation and
Demodulation Techniques of AM.
Ans. Comparison between Conductor, Semiconductor and Insulator
S. No. Conductor Semiconductor Insulator
It has smaller number of free electrons. (Free carrier concentration is in between 10^7 to 10 27 cm -3)
It has very few free electrons. (Free carrier concentration is less than 107 cm -3)
On increasing temperature conductivity improves
On increasing temperature conductivity improves
Ans. Semiconductors: These materials have conductivity poor tan conductors but better than insulators. Resistivity of these materials is of the order of 10-7^ to 10 4 Ωm. Classification of semiconductors: Semiconductors are classified into two types. Intrinsic semiconductors. Extrinsic semiconductors. Intrinsic semiconductors: A semiconductor in an extremely pure form is known as intrinsic
semiconductor. Example: Silicon, Germanium.
Extrinsic Semiconductor: When an impurity is added to an intrinsic semiconductor its conductivity
changes. This process of adding impurity to a semiconductor is called Doping and the impure
semiconductor is called extrinsic semiconductor.
Ans 3. In this condition no external supply is connected to the PN junction Diode. In p type semiconductor there are negatively charged acceptor ions and positively charged holes while in n-type semiconductor there are positively charged Donor ions and negatively charged electrons.
Initially there is diffusion of charge Carriers (electrons and holes) from both sides of the junction. These free charge Carriers recombine near the junction due to which reason is formed which is known as depletion region.