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BASIC ELECTRONICS ENGINEERING
Subject Code – REC 101 (ODD) / REC 201 (EVEN)
SYLLABUS
Unit – 1 : PN junction diode
Introduction of Semiconductor Materials Semiconductor Diode: Depletion layer, V-I
characteristics, ideal and practical, diode resistance, capacitance, Diode Equivalent Circuits,
Transition and Diffusion Capacitance, capacitance, Zener Diodes breakdown mechanism
(Zener and avalanche) Diode Application: Series , Parallel and Series, Parallel Diode
Configuration, Half and Full Wave rectification, Clippers, Clampers, Zener diode as shunt
regulator, Voltage-Multiplier Circuits Special Purpose two terminal Devices : Light-Emitting
Diodes, Varactor (Varicap) Diodes, Tunnel Diodes, Liquid-Crystal Displays.
Unit – 2 : Bipolar Junction Transistors and Field Effect Transistor
Bipolar Junction Transistor: Transistor Construction, Operation, Amplification action.
Common Base, Common Emitter, and Common Collector Configuration DC Biasing BJTs:
Operating Point, Fixed-Bias, Emitter Bias, Voltage-Divider Bias Configuration. Collector
Feedback, Emitter-Follower Configuration. Bias Stabilization. CE, CB, CC amplifiers and AC
analysis of single stage CE amplifier (re Model). Field Effect Transistor: Construction and
Characteristic of JFETs. AC analysis of CS amplifier, MOSFET (Depletion and
Enhancement) Type, Transfer analysis of CS amplifier, MOSFET (Depletion and
Enhancement) Type, Transfer Characteristic.
Unit – 3 : Operational Amplifiers
Introduction and Block diagram of Op Amp, Ideal & Practical characteristics of Op Amp,
Differential amplifier circuits, Practical Op-Amp Circuits (Inverting Amplifier, Non inverting
Amplifier, Unity Gain Amplifier, Summing Amplifier, Integrator, and Differentiator). OPAMP
Parameters: Input offset voltage, Output offset voltage, Input biased current, and Input offset
current Differential and Common-Mode Operation.
Unit – 4 : Electronic Instrumentation and Measurements
Digital Voltmeter : Introduction, RAMP Techniques Digital Multimeters : Introduction
Oscilloscope: Introduction, Basic Principle, CRT , Block Diagram of Oscilloscope, Simple
CRO, Measurement of voltage, current phase and frequency using CRO, Introduction of
Digital Storage Oscilloscope and Comparison of DSO with Analog Oscilloscope.
Unit – 5 : Fundamentals of Communication Engineering
Elements of a Communication System, Need of Modulation, Electromagnetic spectrum and
typical applications. Basics of Signal Representation and Analysis, Introduction of various
analog modulation techniques, Fundamentals of amplitude modulation, Modulation and
Demodulation Techniques of AM.
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BASIC ELECTRONICS ENGINEERING

Subject Code – REC 101 (ODD) / REC 201 (EVEN)

SYLLABUS

Unit – 1 : PN junction diode

Introduction of Semiconductor Materials Semiconductor Diode: Depletion layer, V-I

characteristics, ideal and practical, diode resistance, capacitance, Diode Equivalent Circuits,

Transition and Diffusion Capacitance, capacitance, Zener Diodes breakdown mechanism

(Zener and avalanche) Diode Application: Series , Parallel and Series, Parallel Diode

Configuration, Half and Full Wave rectification, Clippers, Clampers, Zener diode as shunt

regulator, Voltage-Multiplier Circuits Special Purpose two terminal Devices : Light-Emitting

Diodes, Varactor (Varicap) Diodes, Tunnel Diodes, Liquid-Crystal Displays.

Unit – 2 : Bipolar Junction Transistors and Field Effect Transistor

Bipolar Junction Transistor: Transistor Construction, Operation, Amplification action.

Common Base, Common Emitter, and Common Collector Configuration DC Biasing BJTs:

Operating Point, Fixed-Bias, Emitter Bias, Voltage-Divider Bias Configuration. Collector

Feedback, Emitter-Follower Configuration. Bias Stabilization. CE, CB, CC amplifiers and AC

analysis of single stage CE amplifier (re Model). Field Effect Transistor: Construction and

Characteristic of JFETs. AC analysis of CS amplifier, MOSFET (Depletion and

Enhancement) Type, Transfer analysis of CS amplifier, MOSFET (Depletion and

Enhancement) Type, Transfer Characteristic.

Unit – 3 : Operational Amplifiers

Introduction and Block diagram of Op Amp, Ideal & Practical characteristics of Op Amp,

Differential amplifier circuits, Practical Op-Amp Circuits (Inverting Amplifier, Non inverting

Amplifier, Unity Gain Amplifier, Summing Amplifier, Integrator, and Differentiator). OPAMP

Parameters: Input offset voltage, Output offset voltage, Input biased current, and Input offset

current Differential and Common-Mode Operation.

Unit – 4 : Electronic Instrumentation and Measurements

Digital Voltmeter : Introduction, RAMP Techniques Digital Multimeters : Introduction

Oscilloscope: Introduction, Basic Principle, CRT , Block Diagram of Oscilloscope, Simple

CRO, Measurement of voltage, current phase and frequency using CRO, Introduction of

Digital Storage Oscilloscope and Comparison of DSO with Analog Oscilloscope.

Unit – 5 : Fundamentals of Communication Engineering

Elements of a Communication System, Need of Modulation, Electromagnetic spectrum and

typical applications. Basics of Signal Representation and Analysis, Introduction of various

analog modulation techniques, Fundamentals of amplitude modulation, Modulation and

Demodulation Techniques of AM.

Unit – 1 : PN junction diode

Q1. Compare conductors, semiconductors and insulators on the

basis of conductivity, energy band diagram and effect of

temperature.

Ans. Comparison between Conductor, Semiconductor and Insulator

S. No. Conductor Semiconductor Insulator

  1. It has large number of free electrons (Free carrier concentration more than 10^27 cm -3)

It has smaller number of free electrons. (Free carrier concentration is in between 10^7 to 10 27 cm -3)

It has very few free electrons. (Free carrier concentration is less than 107 cm -3)

  1. Resistivity: 10-8^ Ωm Resistivity: 10 -4^ to 10 7 Ωm Resistivity: 10 10 to 10 20 Ωm
  1. On increasing temperature conductivity decreases

On increasing temperature conductivity improves

On increasing temperature conductivity improves

Q2. Define semiconductors. What are intrinsic and extrinsic

semiconductors? Explain them.

Ans. Semiconductors: These materials have conductivity poor tan conductors but better than insulators. Resistivity of these materials is of the order of 10-7^ to 10 4 Ωm. Classification of semiconductors: Semiconductors are classified into two types. Intrinsic semiconductors. Extrinsic semiconductors. Intrinsic semiconductors: A semiconductor in an extremely pure form is known as intrinsic

semiconductor. Example: Silicon, Germanium.

Extrinsic Semiconductor: When an impurity is added to an intrinsic semiconductor its conductivity

changes. This process of adding impurity to a semiconductor is called Doping and the impure

semiconductor is called extrinsic semiconductor.

Q3. Explain the working of diode in open circuit (no bias) condition.

Or

Explain the formation of depletion region in diode.

Ans 3. In this condition no external supply is connected to the PN junction Diode. In p type semiconductor there are negatively charged acceptor ions and positively charged holes while in n-type semiconductor there are positively charged Donor ions and negatively charged electrons.

Initially there is diffusion of charge Carriers (electrons and holes) from both sides of the junction. These free charge Carriers recombine near the junction due to which reason is formed which is known as depletion region.

  • Majority carriers on both sides of junction will move away from the junction
  • Minority Carriers on both sides of junction will move towards Junction.
  • Width of depletion will increase
  • Net current across the junction is only due to minority charge Carriers and its directions from n to p.
  • In Reverse bias condition the current across the junction is very small and become constant at very low reverse Bias Voltage. This constant current is known as reverse saturation current or leakage current.

Q5. Write diode equation and draw V/I

characteristics of diode.

Ans 5. Diode Equation: Diode equation can be given as: