Bessel zero method - Communications and Physical Electronics 001 - Exam, Exams of Communication

Main point of this past exam are: Bessel Zero Method, Modulating Information, Factor, Negative Peak Clipping, Permitted Modulation Index, Circuit Diagram, Peak Frequency

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2012/2013

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Cork Institute of Technology
Bachelor of Engineering (Honours) in Electronic Engineering – Stage 2
(Bachelor of Engineering in Electronic Engineering – Stage 2)
(NFQ – Level 8)
Summer 2005
Communications and Physical Electronics
(Time: 3 Hours)
Instructions
Answer FIVE questions, including at least TWO questions
from each Section.
Use separate answer books for each Section.
All questions carry equal marks.
Values for useful physical constants
q = |e | = 1.602 x 10-19 C me = 9.110 x 10 –31 kg
c = 2.998 x 108 m s-1 h = 6.626 x 10-34 J s
k = 1.381 x 10-23 J K-1 εo = 8.85 x 10-12 F m-1
Examiners: Professor C. Burkley
Mr. J. Ryan
Dr O. Gough
Mr. J. A. O’Doherty
Section A
Q1. (a) A possible technique for demodulating a DSB-SC signal is by coherent detection. Sketch
a diagram of such a detector and show that it will recover the modulating information. In
addition show that if the local oscillator has a phase error of θ, that the detected signal
voltage will be reduced by a factor of cos(θ). (12 marks)
(b) Show that, in order to avoid negative peak clipping in a diode detector, the maximum
permitted modulation index is given by
DC
AC
R
R
m
max . (8 marks)
Q2. (a) Explain how the Bessel zero method may be used to set the frequency deviation of an FM
system to a particular value. (4 marks)
(b) Draw a detailed circuit diagram of a Foster-Seeley Discriminator and explain how it can
be used to demodulate a frequency modulated signal. (10 marks)
(c) An FM modulator using a reactance FET is required to achieve a peak frequency
deviation of 50 kHz at a carrier frequency of 90 MHz. The inductor used in the oscillator
is 0.4 µH. Determine the total capacitance swing required of the reactance FET.
(6 marks)
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Cork Institute of Technology

Bachelor of Engineering (Honours) in Electronic Engineering – Stage 2

(Bachelor of Engineering in Electronic Engineering – Stage 2)

(NFQ – Level 8)

Summer 2005

Communications and Physical Electronics

(Time: 3 Hours)

Instructions Answer FIVE questions, including at least TWO questions from each Section. Use separate answer books for each Section. All questions carry equal marks.

Values for useful physical constants q = |e | = 1.602 x 10-19^ C me = 9.110 x 10 –31^ kg c = 2.998 x 10 8 m s -1^ h = 6.626 x 10 -34^ J s k = 1.381 x 10 -23^ J K -1^ εo = 8.85 x 10 -12^ F m-

Examiners: Professor C. Burkley Mr. J. Ryan Dr O. Gough Mr. J. A. O’Doherty

Section A

Q1. (a) A possible technique for demodulating a DSB-SC signal is by coherent detection. Sketch a diagram of such a detector and show that it will recover the modulating information. In addition show that if the local oscillator has a phase error of θ, that the detected signal voltage will be reduced by a factor of cos(θ). (12 marks) (b) Show that, in order to avoid negative peak clipping in a diode detector, the maximum permitted modulation index is given by DC

AC R

mR max.^ (8 marks)

Q2. (a) Explain how the Bessel zero method may be used to set the frequency deviation of an FM system to a particular value. (4 marks) (b) Draw a detailed circuit diagram of a Foster-Seeley Discriminator and explain how it can be used to demodulate a frequency modulated signal. (10 marks) (c) An FM modulator using a reactance FET is required to achieve a peak frequency deviation of 50 kHz at a carrier frequency of 90 MHz. The inductor used in the oscillator is 0.4 μH. Determine the total capacitance swing required of the reactance FET. (6 marks)

Q3. (a) Sketch a block diagram of a superheterodyne receiver and indicate how image frequency interference and adjacent channel interference can be rejected in such a receiver. (8 marks) (b) Explain the terms (i) Noise Temperature, (ii) Shot Noise and (iii) 1/f Noise (6 marks) (c) A high sensitivity radio receiver system consists of a low noise amplifier with power gain of 15 dB and noise figure of 0.5 dB followed by a transmission line with a loss of 2 dB and a receiver block with a gain of 30 dB and a noise figure of 6 dB. If the antenna used has an effective noise temperature of 100 K, determine the overall noise temperature of the system. (6 marks)

Q4. (a) Briefly explain the term ‘Multiplexing’as it is applied to (i) Frequency division multiplexing and (ii) Time Division Multiplexing. (6 marks) (b) If a PAM waveform is quantized into M levels with a uniform step size ∆V, show that the quantization noise is given by 12

V^2

N (^) q = ∆. (8 marks)

(c) A TDM-PCM system is required to fulfil the following requirements. Deliver 18 channels each band limited to 15 kHz, with SQNR of at least 60 dB. If Nyquist rate sampling is employed and16 bits of framing overhead is required determine: (i) The Frame period , (ii) The length of each timeslot and (iii) The total bitrate. (6 marks)

Section B

Q5 (a) Explain why pulse dispersion limits the data rate in a communications circuit. Describe three different dispersion mechanisms and, in each case explain the operating conditions where their influence is most significant. (10 marks) (b) Estimate the data-rate in a communications link that employs an optical fibre that has the following parameters: length, 18 km modal dispersion, 16 ns km- material dispersion, 6 ns (nm-km) - waveguide dispersion, - 2 ns (nm-km) - spectral bandwidth of the associated laser diode, 0.8 nm. (10 marks)

USEFUL EQUATIONS, PART B

  • Spacing of (h k l) planes in a crystal, d (^) h k l = 2 a 2 2 h + k + l
  • Effective mass,

2 1 2 2 m = d E d k

 ^ −

h  

  • Decay of excess carriers, ∆n (^) t = ∆n exp(- (^) o tτ)
  • Drift current density for electrons, J = n q vd = n q μn E
  • Diffusion current density for electrons, Jdiffusion = +q D (^) nd nd x
  • Barrier voltage in a P N junction, Vo = k Tq^ ln ^ nnnp  

• Current in an ideal P N junction, I = I [expo ( q Vk T)- 1]

  • Differential resistance, r = k Tq I ≈ 0.026I
  • Width of the depletion layer in P N junction,

1 2 A D w = 2 V^ ( 1 + 1 ) q N^ N

 ε   

• Maxwell –Boltzmann distribution function, f (E) = A exp ( - ∆Ek T)

  • Fermi-Dirac distribution function,

1 f (E) = 1 + exp E - EF k T

  ^ −

• Fermi energy level in a metal,^ ( )

(^2 ) EF = h 2 m∗ 3 N 8 π

  • Energy of quantized levels,

2 2 En = h n 8 m L 2

  • Responsivity of a photodiode, = q o λ h c R η^ λ
  • Johnson noise,

(^12) Vr m s = (4 k T R (^) shunt∆ν)

  • Shot noise,

(^12) i (^) r m s= (2 i q ∆ν)

  • D-star,

(A )^12

D =

N E P

∗ ∆ν

  • Optical fibre, o

V = π(diameter) λ

N A

  • For single mode operation , V ≤ 2.
  • Intermodal pulse dispersion, 1 1 2 2

= n (n^ - n^ ) L n c

∆τ

  • Bandwidth, = ∆ν= 0.132pulse dispersion
    • Loss-tangent, tan δ = ε^ ′′ε′ = (^1) ωC R