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Characteristics and Applications of Diodes-Basic Electronics-Lab Assignment, Exercises of Electronics

Anna UniversityElectronics

The course gives the students a sound knowledge of Fourier transforms along with Fourier integrals, partial differential equations, advanced vector analysis, complex variables and complex integrals. This lab includes: Characteristics, Applications, Diode, Clipper, Clamper, Rectifier, Applications, Components, Voltage, Regulators, Simulation

Typology: Exercises

2011/2012

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School of Electrical Engineering and Computer Science
1
EE216_Diodes Lab 3_ver5_SI
EE 216ELECTRONICS-I
LABORATORY EXERCISE -3
Characteristics & Applications of Diode
Objective: To Study the Characteristics& Applications of Diodes.
1. The primary purpose of this lab is to develop a working knowledge of diode. Diodes
can be used in variety of circuits for various applications such as rectifiers,
clippers/clampers and voltage regulators.
Components Required:
2. The following component and test equipment is required.
• PN Diode (D1N4002 or any other diode of the same family)
• Oscilloscope
• Function Generator
• Resistors
• Capacitors
• Power Supply
The Experiment:
3. The experiment is broken down in three exercises. Each exercise has further been
divided into parts. Part I involves the simulation of the circuit on Pspice using Orcad-
Capture module. The second part involves the practical setup of this circuit and
making required measurements, tabulation and its analysis.
Exercise – I (Part A) [Simulation]
4. The first part of the experiment is to draw a graph of the V-I relationship of a diode
using PSpice; this may be .accomplish by using the DC sweep analysis mode of the
simulation.
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EE216_Diodes Lab 3_ver5_SI

EE 216ELECTRONICS-I

LABORATORY EXERCISE -

Characteristics & Applications of Diode

Objective: To Study the Characteristics& Applications of Diodes.

  1. The primary purpose of this lab is to develop a working knowledge of diode. Diodes can be used in variety of circuits for various applications such as rectifiers, clippers/clampers and voltage regulators.

Components Required :

  1. The following component and test equipment is required.
    • PN Diode (D1N4002 or any other diode of the same family)
    • Oscilloscope
    • Function Generator
    • Resistors
    • Capacitors
    • Power Supply

The Experiment:

  1. The experiment is broken down in three exercises. Each exercise has further been divided into parts. Part I involves the simulation of the circuit on Pspice using Orcad- Capture module. The second part involves the practical setup of this circuit and making required measurements, tabulation and its analysis.

Exercise – I (Part A) [Simulation]

  1. The first part of the experiment is to draw a graph of the V-I relationship of a diode using PSpice; this may be .accomplish by using the DC sweep analysis mode of the simulation.

EE216_Diodes Lab 3_ver5_SI

Figure-1A_

  • Draw the circuit shown in figure 1A_1 on OrCad capture. Please make sure you have saved the files as instructed explained during lab-1 by the instructor.
  • Since we are analyzing a diode, we would need to draw its I-V characteristic curve. To do that, we need to simulate our circuit using DC Sweep profile settings.
  • Do the profile setting as shown in figure 1A_4. Please make sure that you know what do we mean by DC Sweep and how various value changes would affect the graph obtained.
  • You should make sure that the name of the voltage source is V1. If there is a

different name then you should change it accordingly. Place the current marker at

the upper pin of the diode and run the simulation.

  • Repeat the experiment by selecting logrithmic scale. This can be done by simply

selecting the options shown in the given figure 1A_2:

(Figure 1A_2)

Use these to convert into log

EE216_Diodes Lab 3_ver5_SI

o Observe the graph obtained and make yourself familiar with various

mathematical calculation you can do with Orcad.

  • Answer the following questions in your report:

o Spot the threshhold voltage of the diode from the graph? Do you think it is a silicon based diode or germanium based diode? Explain your answer supported with calculations.

o Calculate the value of RD at 0.5mA, 1mA, 2mA and 4mA. Compare the values and explain why the values are different?

o Take atleast eight readings at different current values, say from 0.5mA to 4mA with 0.5mA difference, and plot RD. Explain if it linear or non linear?

o Explain the behaviour of RD with respect to VD as observed in the graph drawn.

Figure 1A_

  • The graph that you had seen so far was between Vin and ID. Now change the x-axis variable by following the steps as shown in figure 1A_5, figure 1A_6 and figure 1A_7. This would be ID vs VD curve of the diode. How can you explain the behavior of the diode from this curve? Answer in your report.