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Various combinational logic technologies including programmable logic devices (pla and pal), mos transistor logic, multiplexers/decoders, and rom. It includes design examples and explanations of how these technologies work.
Typology: Slides
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Pre-fabricated building block of many AND/OR gates (or NOR, NAND) "Personalized" by making or breaking connections among the gates
Programmable Array Block Diagram for Sum of Products Form
Inputs
Dense array of AND gates Product terms
Dense array of OR gates
Outputs
Example:
Equations
Personality Matrix
Key to Success: Shared Product Terms
1 = asserted in term 0 = negated in term
- = does not participate
1 = term connected to output 0 = no connection to output
Input Side:
Output Side:
Product Inputs Outputs term
Reuse of terms
Unwanted connections are "blown"
Note: some array structures work by making connections rather than breaking them
Short-hand notation so we don't have to draw all the wires!
Notation for implementing F0 = A B + A' B' F1 = C D' + C' D
PAL concept — implemented by Monolithic Memories constrained topology of the OR Array
A given column of the OR array has access to only a subset of the possible product terms
PLA concept — generalized topologies in AND and OR planes
Truth Table (^) K-maps
Minimized Functions:
A 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 B 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 C 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 D 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 W 0 0 0 0 0 1 1 1 1 1 X X X X X X X 0 0 0 0 1 1 0 0 0 0 X X X X X X Y 0 0 1 1 1 1 1 1 0 0 X X X X X X Z 0 1 1 0 0 0 0 1 1 0 X X X X X X AB CD 00 01 11 10 00 01 11 10
D
B
C
A
0 0 X 1 0 1 X 1 0 1 X X 0 1 X X
K-map for W
AB CD 00 01 11 10 00 01 11 10
D
B
C
A
0 1 X 0 0 1 X 0 0 0 X X 0 0 X X
K-map for X
AB CD 00 01 11 10 00 01 11 10
D
B
C
A
0 1 X 0 0 1 X 0 1 1 X X 1 1 X X
K-map for Y
AB CD 00 01 11 10 00 01 11 10
D
B
C
A
0 0 X 1 1 0 X 0 0 1 X X 1 0 X X
K-map for Z
AND-OR-Invert PAL/PLA
Generalized Building Blocks Beyond Simple Gates
So far we have seen:
Kinds of "Non-gate logic":
**- switching circuits built from CMOS transmission gates
Voltage Controlled Switches
Gate Oxide Source Drain Silicon Bulk
Channel Region
Metal Gate, Oxide, Silicon Sandwich
Diffusion regions: negatively charged ions driven into Si surface
Si Bulk: positively charged ions
By "pulling" electrons to the surface, a conducting channel is formed
"n-Channel MOS"
n-type Si p-type Si
Logic Gates from Switches
+5V
A (^) A
+5V
A (^) B
A B
+5V
A (^) B
A + B
Inverter NAND Gate^ NOR Gate
Pull-up network constructed from pMOS transistors
Pull-down network constructed from nMOS transistors
Inverter Operation
+5V
"1" (^) "0"
+5V
"0" (^) "1"
Input is 1 Pull-up does not conduct Pull-down conducts Output connected to GND
Input is 0 Pull-up conducts Pull-down does not conduct Output connected to VDD
NOR Gate Operation
+5V
"0" (^) "0"
"1"
+5V
"1" (^) "0"
"0"
Pull-up network conducts Pull-down network broken Output node at VDD
Pull-up network broken Pull-down network conducts Output node at GND
nMOS transistors good at passing 0's but bad at passing 1's
pMOS transistors good at passing 1's but bad at passing 0's
perfect "transmission" gate places these in parallel:
In Out
Control
Control
In Out
Control
Control
In (^) Out
Control
Control
Switches (^) Transistors Transmission or "Butterfly" Gate