Connected - Microelectronic Devices and Circuits - Solved Exam, Exams of Microelectronic Circuits

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UNIVERSITY OF CALIFORNIA, BERKELEY Coilege of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Fall 2007 MIDTERM EXAMINATION #1 Time allotted: 80 minutes NAME: SOLUTIONS (print) Last First Signature STUDENT ID#: INSTRUCTIONS: 1. Use the values of physical constants provided below. 2. SHOW YOUR WORK. (Make your methods clear to the grader!) 3. Clearly mark (underline or box) your answers. 4. Specify the units on answers whenever appropriate. PHYSICAL CONSTANTS Description Symbol Value PROPERTIES OF SILICON AT 300K Electronic charge q 16xloP?c D Boltzmann’s constant k —-8.62x10%eV/K _ Band gap energy Thermal voltage at 300K. p= k7/q = 0.026 V Intrinsic carrier concentration Ki Dielectric permittivity sj 1.0x10"? Fem Note that Vp In(10) = 0.060 V at 7=300K Electron and Hole Mobilities in Silicon at 300K SCORE: 1 425 2 125 3 130 Total: 780 Page |