Crystallography: Rietveld refinement, Slides of Mineralogy and Mineral Processing

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Rietveld refinement
Method of refining powder diffraction data to find the crystal
structure, developed by Hugo M. Rietveld
Seminal papers
H.M. Rietveld, Acta Cryst. 22 (1967) 151.
H.M. Rietveld, J. Appl. Cryst. 2(1969) 65.
Overview of Rietveld refinement guidelines
L.B. McCusker, R.B. Von Dreele, D.E. Cox, D. Louer, P.
Scardi, J. Appl. Cryst. 32 (1999) 36.
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Rietveld refinement

Method of refining powder diffraction data to find the crystalstructure, developed by Hugo M. RietveldSeminal papersH.M. Rietveld,

Acta Cryst.

H.M. Rietveld,

J. Appl. Cryst.

Overview of Rietveld refinement guidelinesL.B. McCusker, R.B. Von Dreele, D.E. Cox, D. Louer, P.Scardi,

J. Appl. Cryst.

Practical reasons to perform a

Rietveld refinement

•^ solving an unknown crystal structure• calculating the amount disorder or mixing on a Wyckoff site• quantitatively determining the percentages of different phasesin your sample• determining the crystallite sizes in your samples

Factors affecting peak intensities

1.^

Structure factors (form factors)

2.^

Multiplicity

3.^

Lorentz factor

}^

LP factor

4.^

Polarization factor

5.^

Temperature factor or atomic displacement

6.^

Absorption

7.^

Preferred orientation

8.^

Extinction coefficients

Scattering considerations

fluorescentx-rays

heat

transmitted

electrons

beam

absorbing substance

incident beam

scattered x-rays (coherent & incoherent)

figure modified from N.F.M. Henry, H. Lipson, W.A.Wooster.

The Interpretation of X-ray Diffraction Photographs

, Macmillan: London, 1951.

Structure Factors

amplitude of the wave scatteredby all the atoms in a unit cell

|^ F

hkl^

amplitude of the wave scatteredby one electron Fhkl

= āˆ‘ f

exp [2n

Ļ€i (hu + kv + lw)]

It describes how the atom arrangement (u, v, w) affects thescattered beam.

fn

is the atomic scattering factor. The

intensity of a diffracted beam is proportional to |F |

Note:

exp(

Ļ€i) = - exp(

Ļ€i) = + exp(n

Ļ€i) = exp(-n

Ļ€i)

Structure Factors: example 1

Fhkl

= āˆ‘ f

exp [2n

Ļ€i (hu + kv + lw)]

A primitive cell with only one atomat the origin (0,0,0).

Fhkl

= f exp [

Ļ€i (h0 + k0 + l0)]

Fhkl

= f exp [

Ļ€i (0)]

Fhkl

= f

The intensity of the diffracted beam F

2 depends only on f

Structure Factors: example 2

Cl^

Na

Fhkl

= f

eCl 2 πi(0)

  • f

eCl 2 πi(h/2+k/2)

+fCl

(^2) e πi(h/2+l/2)

  • f

eCl 2 πi(k/2+l/2)

+fNa

(^2) e πi(h/2+k/2+l/2)

  • f

Na^

2 πe i(l/2)

  • f

Na^

2 πe i(k/2)

  • f

Na^

2 πe i(h/2)

Fhkl

= f

{1 + eCl

Ļ€i(h+k)

  • e

Ļ€i(h+l)

  • e

Ļ€i(k+l)

+fNa

{e πi(h+k+l)

  • e

Ļ€il^

  • e

Ļ€ik^

  • e

Ļ€ih

Fhkl

= f

{1 + eCl

Ļ€i(h+k)

  • e

Ļ€i(h+l)

  • e

Ļ€i(k+l)

+fNa

Ļ€e i(h+k+l)

{1 + e

Ļ€i(-h-k)

  • e

Ļ€i(-h-l)

  • e

Ļ€i(-k-l)

Fhkl

= {1 + e

Ļ€i(h+k)

  • e

Ļ€i(h+l)

  • e

Ļ€i(k+l)

} { f

  • fCl

eNa πi(h+k+l)

recall: exp(n

Ļ€i) = exp(-n

Ļ€i)

Structure Factors: example 2

Fhkl

= {1 + e

Ļ€i(h+k)

  • e

Ļ€i(h+l)

  • e

Ļ€i(k+l)

} { f

  • fCl

eNa πi(h+k+l)

If h+k+l is odd-odd-even or odd-even-even

{1 + e

Ļ€i(h+k)

  • e

Ļ€i(h+l)

  • e

Ļ€i(k+l)

If h+k+l is all even, { f

  • fCl

eNa πi(h+k+l)

} = f

  • fCl

Na

Fhkl

=^

4 (f

  • fCl

) = 4 ( 18 eNa

-^ + 10 e -^ ) = 112 e

2 F

=^12544

If h+k+l is all odd, { f

  • fCl

eNa πi(h+k+l)

} = f

  • fCl Na

Fhkl

=^

4 (f

  • fCl

) = 4 ( 18 eNa

-^ - 10 e -^ ) = 32 e

2 F

=^1024

Note: atomic scattering factor is the number of electrons in the ions

Multiplicity (M)

In a cubic structure (a = b = c){100} is (100), (010), (001), (-100), (0-10), (001) so M = 6{110} is (110), (-110), (1-10), (-1-10) so M = 12The {110} peak is expected to be TWICE as strong as the {100}

How distortions affect multiplicity

From cubic (a = b = c)

→^

tetragonal (a = b ≠ c)

(100) M = 6

→^

(100), (-100), (010), (0-10)

M = 4

(001), (00-1)

M = 2

(110) M = 12

→^

(110)

M = 4

(101)

M = 8

(111) M = 8

→^

(111)

M = 8

cubic tetragonal

(100)

(110)

(111)

Polarization factor

Polarization factor = ½ (1 + cos

22 Īø)

LP factor = (1+cos

22 Īø

)/(sin

2 Īø^

cos

Īø)

Note 1. If a monochromator is used, then the polarizationfactor is ½ (1 + cos

22 Īø

cos

22 Īø

) whereM

ĪøM

is the Bragg

angle for the monochromator.Note 2. For neutron diffraction, polarization is a constant.

LP vs Īø figure from Cullity & Stock, 2001.

Temperature factor

Thermal vibrations1. Unit cell expansion causes changes in the 2Īø positions.2. Decrease in the intensities of diffracted lines.3. Increase in the intensity of background scattering.

Figure from Cullity & Stock, 2001.

Absorption

Idiffracted

= I

incident

exp (-

μt)

μ^ is the linear absorption coefficient, and

t^ is the thickness of

the sample.

Preferred orientation

-^

crystals are not randomly oriented

-^

examples: plate-like crystals or needle-shaped crystals March-Dollase functionP(α) = (r

2 cos

2 α+sin

2 α/r)

-3/

P(α)

pole distribution α^

angle between hkl & PO vector r^

adjustable parameter

Spherical harmonic function• measurement of the pole densitydistributions of a number ofdiffraction planes• more complex and thus morepowerful