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EECSIOS dof 15 Fall 1999 | | Microelectronic Devices and Circuits- EECS105 | Final Exam Wednesday, December 8, 1999 Costas J. Spanos ; University of California at Berkeley College of Engineering Department of Electrical Engineering and Computer Sciences Your Name: Ot licla Guts (last) dirs} Your Signature: - 1. Print and sign your name on this page before you start. 2. You are allowed three, 8,5"%11" handwritten sheets, No books or notes! 3. Do everything on this exam, and make your methods as clear ax possible. Problem I é24 - Problem 2 123A WV G=69 Problem 3 _/24 0 & 2 193 Problem 4 (24 TOTAL 100 MOS Device Data (vou may not have to use all of these... UnCox= SOHAIW?, thpCox= 25HAV?, Vipq = “Wry = 1V, Lin = 2m. Vas = 0. Aq ® ep = O.LV" when L = 2pm, and it is otherwise proportional to V/L. Cox = 2:38 hum”, Cjq = 0.14F um, Cjp = 0.3 fF ham?, Cisiyn = 0.50F/um, Coup = O-35EE um, Coy = 0.5EF/um, Coyy = 0.58 /um. npn Data 15= 10717A, B= 100, V4 =25V, 9 o'74, p= 50, Va=25V, ¥ pnp Data Is EBCSIOS 2of 15 Fall 1999 Problem 1 of 4: Answer each question briefly and clearly. (4 points each, total 24) ‘Mark in the table below the npn Bipolar Transistor in forward action mode the direction of flow, and the ie of flow (drift or diffusion) of electrons, in each of the bulk and depletion regions. waitin elehon o> Fe BE juneticn BE jumeciom drift . v Tv yi LL (place a mark at the diffusion Viviv appropriate box to indicale your answer. You can choose more. ~ viviviw | than one box if appropriate.) ~ | Where is the maximem [Fl field in a forward-biased junction? Please place a mark on the graph below. depletion pape og SOP nype in (Gone) ‘What happens to the drain current of an n-channel MOS transistor in saturation, when L and W increase proportionally? (ie. L and W increase, but W/L stays constant, Assume that Visg, Vpg and Vips stay constant. Do take A into account!) J i ii — v L at Tos L dalog (bs-vr)% 8 (te Aas} 2 L