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Instructor: Engr. Penmyrn I. Sabanal
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Electronics Circuits: Devices and Analysis ECE220a
Semiconductor Fundamentals
I. Introduction to Semiconductor
Diodes, transistors, integrated circuits, and other so-called "solid state"
devices are made from crystals of a semiconductor material, usually Silicon or
Germanium. At room temperature, the crystals of pure silicon and germanium are
neither good insulators nor good conductors. This is why they are called
semiconductors.
Semiconductor
- materials whose electrical conductivity lies between conductor and an
insulator
- have a medium energy gap that results in small amount of current flow
- have 4 electrons in its outer most orbit and which forms crystalline
structure
- pure semiconductor materials are Germanium, Silicon, and Carbon
- as the temperature increases in a semiconductor material, electrons drift
from one atom to another
- current flow in semiconductor materials consists of both electron flow and
hole movement
- has negative temperature coefficient of resistance, i.e. the resistance of
semiconductor decreases with increase in temperature and vice versa
- the resistivity lies between insulator and conductor
- doping increases conductivity of semiconductor
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Electronics Circuits: Devices and Analysis ECE220a

Semiconductor Fundamentals

I. Introduction to Semiconductor

Diodes, transistors, integrated circuits, and other so-called "solid state" devices are made from crystals of a semiconductor material, usually Silicon or Germanium. At room temperature, the crystals of pure silicon and germanium are neither good insulators nor good conductors. This is why they are called semiconductors. Semiconductor

  • materials whose electrical conductivity lies between conductor and an insulator
  • have a medium energy gap that results in small amount of current flow
  • have 4 electrons in its outer most orbit and which forms crystalline structure
  • pure semiconductor materials are Germanium, Silicon, and Carbon
  • as the temperature increases in a semiconductor material, electrons drift from one atom to another
  • current flow in semiconductor materials consists of both electron flow and hole movement
  • has negative temperature coefficient of resistance, i.e. the resistance of semiconductor decreases with increase in temperature and vice versa
  • the resistivity lies between insulator and conductor
  • doping increases conductivity of semiconductor

Type of Extrinsic Material

  1. N-type Semiconductor
    • Pentavalent materials
    • Electrons are the majority carrier
    • Holes are the minority carrier Figure 1. Current flow in N-type material
  2. P-type Semiconductor
    • Trivalent materials
    • Holes are the majority carrier
    • Electrons are the minority carrier Figure 2. Current flow in P-type material

At the instant the p - n junction is formed, free electrons on the n side migrate or diffuse across the junction to the p side. Once on the p side, the free electrons are minority current carriers. The lifetime of these free electrons is short, however, because they fall into holes shortly after crossing over to the p side. The important effect here is that when a free electron leaves the n side and falls into a hole on the p side, two ions are created: a positive ion on the n side and a negative ion on the p side. As the process of diffusion continues, a barrier potential, V B , is created and the diffusion of electrons from the n side to the p side stops.

  • Barrier Potential , V B Figure 4. Potential Difference at the P-N Junction Ions create a potential difference at the p - n junction. This potential difference is called the barrier potential and is usually designated V B. For Silicon, the barrier potential at the p - n junction is approximately 0.7 V. For Germanium, V B is about 0.3 V. The barrier potential cannot be measured externally with a voltmeter, but it does exist at the p - n junction. The barrier potential stops the diffusion of current carriers.

Biasing the Diode

  • The term bias is defined as a control voltage or current.
    • No Applied Bias ( V = 0 V) Figure 5. A p–n junction with no external bias: (a) an internal distribution of charge; (b) a diode symbol, with the defined polarity and the current direction; (c) demonstration that the net carrier flow is zero at the external terminal of the device when V D = 0 V. * In the absence of an applied bias across a semiconductor diode, the net flow of charge in one direction is zero.
  • Forward-Bias Condition ( V D > 0 V) A forward-bias or “on” condition is established by applying the positive potential to the p - type material and the negative potential to the n - type material. The p material is connected to the positive terminal of the voltage source, V. The voltage source, V , must be large enough to overcome the internal barrier potential V B. Figure 7. Forward-biased p–n junction: (a) internal distribution of charge under forward-bias conditions; (b) forward-bias polarity and direction of resulting current.

Shockleys Equation Thermal Voltage