Final Exam Note Sheets - Introduction to Electronics | ECE 110, Study notes of Electrical and Electronics Engineering

Final exam note sheets Material Type: Notes; Professor: Frizzell; Class: Introduction to Electronics; Subject: Electrical and Computer Engr; University: University of Illinois - Urbana-Champaign; Term: Fall 2010;

Typology: Study notes

Pre 2010

Uploaded on 12/09/2010

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Exam 1
-
q=−1.61019 proton charge=−q
-
I=dQ
dt 1A=1C
sI is positive current
-
R=ρL
Aρ=resistivity=1
G=1
conductivity
-
Ohm
'
s Law :V=IR
-
RMS=Root Mean Square=
average
(
x2
(
t
)
)
o
P
avg
=
(
I
RMS
)
(V
RMS
)
o
RMSAC =Peak ÷
2
-
E=
[
1
T
0
T
P
(
t
)
dt
]
T=¿E=P
avg
T Eis Joules (J)
o
-
KVL
voltage drops=0=
voltage rises applies for aloop
-
KCL I entering=0=I leaving applies at a node
-
Series:R
eq
=
R
n
:G
eq
=
G
n
where G=1
R
-
Voltage Divider Rule :V
j
=R
j
R
eq
V
ab
-
Current Divider Rule:Ij=Gj
Geq
I=
1
Rj
1
Req
I
-
IV Characteristics
o
I=f
(
V
)
o
For an ideal resistor
I=V
R
o
For an ideal voltage source, slope of line is ∞
o
For an ideal current source, slope of line is 0
Exam 2
-
Semiconductor Diode
-
Exponential diode model:
o
I
d
=I
s
(
e
qV d
kT
1
)
o
k=1.3810
23
J
K
(
Boltzman Constant
)
o
q=1.3810
19
C T =temperatureKelvin
o
Note: Doesn’t work in breakdown region
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Exam 1

  • (^) q=−1.6∗ 10 −^19 → proton charge=−q
  • I^ =^ dQ dt

1 A=

1 C

s I is positive current

  • R=ρ^

L

A

ρ=resistivity =

G

conductivity

  • (^) Ohm'^ s Law :V =IR

- RMS=Root Mean Square=√average( x^2 ( t) )

o Pavg =( I RMS ) (V RMS)

o (^) RMSAC =Peak ÷ (^) √ 2

  • E=

[

T

∫ 0 T P ( t ) dt

]

T =¿ E=Pavg∗T Eis∈Joules(J ) o (^) P= dE dt ∧E( t 0 ) =∫ 0 t 0 P (t ) dt

  • KVL →∑ voltage drops= 0 =∑ voltage rises →applies for aloop
  • KCL →∑ I entering= 0 =∑ I leaving → applies at a node
  • Series:^ Req=∑ Rn∥:^ Geq =∑ Gn where^ G=^

R

  • Voltage Divider Rule :V (^) j= R (^) j Req V (^) ab
  • Current^ Divider^ Rule^ :^ I^ j=^ G (^) j Geq

I =

R (^) j 1 Req

I

  • I−V Characteristics o (^) I =f ( V ) o For an ideal resistor I =

V

R

o For an ideal voltage source, slope of line is ∞ o For an ideal current source, slope of line is 0 Exam 2

- Semiconductor Diode - Exponential diode model: o

I d=I s (e

q V (^) d

kT − 1 )

o (^) k =1.38∗ 10 −^23

J

K

( Boltzman Constant ) o (^) q=1.38∗ 10 −^19 C T =temperature∈Kelvin o Note: Doesn’t work in breakdown region

- Forward Biased: I^ d >^0 ∧V^ d =V^ on - Reverse Biased: −V^ B<^ V^ d <V^ on∧Id =−I^ s - Breakdown: I^ d ←^ I^ s∧V^ d =−V^ b - Solar Cell/Photo Detector Diode: o I (^) d=I (^) s (e q V (^) d kT (^) − 1 )−I 0 where I 0 is light intensity

- CMOS Transistors: Exam 3 - MUX De MUX - SR Latches - D Flip Flop - Parallel Register - Counter - Digitizing = Sampling & quantization (determining # of digits to use for each sampled #) - Sample Interval = Ts Sample Rate = fs = 1/Ts - Sequence = ordered set of #’s o A sequence of samples is the set of numerical sampled values of a signal s(t)

o S = { s(0), s(Ts), s(2Ts), s(3Ts), … }