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The course gives the students a sound knowledge of Fourier transforms along with Fourier integrals, partial differential equations, advanced vector analysis, complex variables and complex integrals. This lab includes: Fixed, Voltage, Divider, Bias, Bipolar, Junction, Transistor, Configurations, Quiscent, operating, Conditions, Saturation
Typology: Exercises
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School of Electrical Engineering and Computer Science
Faculty Member:____________________ Dated: ________________
Semester:_____________ Section: ________________
School of Electrical Engineering and Computer Science
Record the resulting values of I
.
Using the results of step (b) calculate the value of β
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Record the resulting values of IB and IC in table 1.1B:
Table 1.1A
Using the results of step (b) calculate the value of β and record in table 1.
RB (measured) =___________________
RC (measured) =__________________
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Figure 1a: Circuit Diagram for Fixed Bias Circuit
β and record in table 1.1B.
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Part B
FIXED-BIAS CONFIGURATION
a. Using the β determined in part A, theoretically calculate the current IB and IC for the circuit of figure 1a, using the measured value for VBE. Use the formula given below. The theoretical values of IB and IC calculated using the circuit parameters and the value of beta (β).
(Calculated) IB =_____________________
(Calculated) IC =_____________________
Ⅵ⅘ 㐄
ⅸ⅙⅙ ㎘ ⅸ⅘Ⅱ
ⅴ⅘
Ⅵ⅙ 㐄 ∶Ⅵ⅘
b. Using the values found in (a) theoretically calculate the voltage level values of VB, VC, VE and VCE.
(Calculated) VB =_____________________
(Calculated) VC =_____________________
(Calculated) VE =_____________________
(Calculated) VCE =_____________________
VCE (volts) IC (mA) (^) IB (μA) β IE (mA) VBE
g. Record the resulting values of insert in table1.1B. h. Using the following equations calculate the magnitude of the percent change in each quantity due to a change in transistor, specifically t voltage and current levels should not change with a change in transistor but the fixed configuration has a high sensitivity to changes in beta. Place the results of your calculations in table 1.
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Record the resulting values of IB and Ic in table 1.1B. In addition, measure the voltage
Using the following equations calculate the magnitude of the percent change in each quantity due to a change in transistor, specifically to one with higher level of beta. Ideally, the important voltage and current levels should not change with a change in transistor but the fixed configuration has a high sensitivity to changes in beta. Place the results of your calculations in
School of Electrical Engineering and Computer Science
In addition, measure the voltage VCE and
Using the following equations calculate the magnitude of the percent change in each quantity o one with higher level of beta. Ideally, the important voltage and current levels should not change with a change in transistor but the fixed-bias configuration has a high sensitivity to changes in beta. Place the results of your calculations in
Part C
Voltage-Divider configuration
a. Now construct the circuit of figure 2a insert in table 2.1A.
Table 2.1A
b. Using the beta determined in part A for the 2N3904 transistor, calculate the theoretical levels of VB,VE ,IE,IC , VE, and IB for the circuit of figure 2a.Insert the result in table 1.3.
R1 (measured) =_______________
R2 (measured) = (^) _____________________
RC (measured) = (^) _____________________
RE (measured) = (^) _____________________
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Now construct the circuit of figure 2a using the 2N3904 transistor. Measure the resistor values and
Table 2.1A
Using the beta determined in part A for the 2N3904 transistor, calculate the theoretical levels of for the circuit of figure 2a.Insert the result in table 1.3.
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Measure the resistor values and
Using the beta determined in part A for the 2N3904 transistor, calculate the theoretical levels of for the circuit of figure 2a.Insert the result in table 1.3.
Problems and Exercises
(Calculate d
(Calculate d
Fixed-bias Voltage-divider
Lab Report:
Each student group has to submit neatly filled handouts with a cover page as a lab report. due before the next lab.
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Compute the saturation current IC sat for the fixed- bias configuration of figure 1.
d) ICsat = __________________________
Compute the saturation current ICsat for the fixed- bias configuration of figure 2.
d) ICsat = __________________________
Is the saturation current of part (a) and (b) sensitive to the beta of the transistor or changes
Determine the ratio of the change in IC, VCE and IB due to changes in beta and complete table
divider
For the fixed bias configuration of figure 1 develop an equation for IB in terms of the other elements β) of the circuit. Then establish an equation for IC?
are much larger then IB permitting the approximation I in terms of the other elements of the circuit of fig 2.
Referring to the results of part (a) and (b), is there an obvious reason why I changes in beta in one configuration compared to the other?
Each student group has to submit neatly filled handouts with a cover page as a lab report.
School of Electrical Engineering and Computer Science
bias configuration of figure 1.
bias configuration of figure 2.
Is the saturation current of part (a) and (b) sensitive to the beta of the transistor or changes in
due to changes in beta and complete table
in terms of the other elements
I 1 ~I 2. Develop an
IC is more sensitive to
Each student group has to submit neatly filled handouts with a cover page as a lab report. Your lab report is
