Download EECS 130 Midterm 2: MOSFET and MOS Capacitor Questions and more Exams Electrical Engineering in PDF only on Docsity!
UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Science EECS 130 Midterm # Nov. 10th, 1998 Prof. C. Hu NAME: SID: (Close book. One sheet of notes of Chapters 8-18 allowed) Physical Constants Electronic Charge ^ ^ C Permittivity of Vacuum
F cm Free Electron Mass ^ !^ "#^ kg Boltzmannโs Constant $
eV K Physical Constants for Si and SiO ( Si Intrinsic Carrier Concentration )+* !^
cm " Si Bandgap , g Si -%^ eV Si Electron affinity. Si / ^ eV Diaelectric constant of Si Si
Dielectric constant of SiO( 3254 6 Problem 1 / 20 Problem 2 / 24 Problem 3 / 16 Problem 4 / 20 Problem 5 / 20 Total / 100
- ( 20 pts ) Consider the C-V curve of a MOS capacitor in the figure (the solid line), the capac- itor area is 6400 7 m
. 8 9;: (^) / pF, 8 :<
pF. C 1 C 0 C (pF) Vg โV (a) ( 3 pts ) What is the substrate type? (b) ( 5 pts ) Find >?254 , the gate oxide thickness. (c) ( 7 pts ) Find the substrate doping concentration @BAC5D. (d) ( 5 pts ) If due to oxide fixed charge, the C-V curve shifted from the solid line to the dashied line, with EGF : H=^ V, what is the type and area density (C cm
) of the oxide fixed charge?
- ( 16 pts ) In the following JK vs. F5L curve, assume >M254N:< A and FO is small: I (^) d (V = -3 V)BS I (^) d (V = 0 V)BS ID V g(V) 0 1 2 3 0.E+ 2.E- 4.E- 1.E- 8.E- 6.E- (a) ( 6 pts ) What is the threshold voltage at FPDPA:RQS6 V? (b) ( 10 pts ) Determine the substrate doping concentration.
- ( 20 pts ) Consider a MOSFET, given F5T: U10^ V, V : 7 m, W<: H^6 X7 m, >?24Y:Z A and J[K\A] T^:
mA at F+AI:`6 V. (a) ( 8 pts ) Ignoring velocity saturation, find 7 \a , estimate JK\A-]T at FPA&: % V. (b) ( 12 pts ) Now consider the effect of velocity saturation, with ,bA] Tc:d
N
V cm, use the same 7 \a as in part (a), find JK\A-]T and FPK\A] T at FP_AG: % V and at FP_AG:Y6 V respectively.
