ECE536 RF Integrated Circuit Design
Colorado State University
Department of Electrical and Computer Engineering
S. C. Reising
T
IV. High Frequency Amplifiers
ECE 536: RF IC Design
S. C. Reising
Lecture #13
October 7, 2008
1
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RF Integrated Circuit Design: Shunt-Peaked CS Amplifier and CS Tuned Amplifier - Prof. Ste, Study notes of Electrical and Electronics Engineering
A set of lecture notes from colorado state university's ece536 rf ic design course, focusing on the topics of shunt-peaked cs amplifiers and cs tuned amplifiers. The notes include diagrams, equations, and calculations for understanding the design and performance of these amplifiers.
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ECE5 36 RF Integrated Circuit Design
Colorado State University
Department of Electrical and Computer Engineering
S. C. Reising
T
IV. High Frequency Amplifiers
S. C. Reising October 7, 2008
Shunt-Peaked CS Amplifier
(^5) 0.1 1 10
4
3
2
1
0
1
2
3 dB
G^ m^1 =1. gm ⋅R (^) L m 2 =2. m 3 =2. m 4 =3. m 5 =500.
ω/ω 1
(^11) 1.5 2 2.5 3 3.5 4
2 2 2.
Normalized 3-dB BW
Ratio of time constants, m = τ 1 /τ 2
S. C. Reising October 7, 2008
Shunt-Series Feedback Amplifier
Frequency response by OCτ Method:
τ 1 Rx ⋅C (^) gd Rx Rin ⋅( 1 + AV)|| RL + Rs
gm ⋅R (^) s⋅RL 1 +gm ⋅R 1
approx = 1 2
⋅R ⋅ AV
τ 2 Ry ⋅C (^) gs Ry
R ⋅ (^) ( RF + R+2 R⋅ 1 )+RF ⋅R 1 ( 2 R⋅ +RF) ⋅( 1 +gm⋅ R 1 )+gm ⋅ R^2
approx =
AV
gm
BW
τ 1 + τ 2
approx = 1 AV
R C⋅ gd
gm Cgs
AV
RL
RF + RL
gm⋅ RF 1 +gm ⋅R 1
⋅ approx =^
−RL
R 1
Rin
RF ⋅( RF +RL)
RF
gm ⋅RF 1 +gm⋅ R 1
+ ⋅RL
approx =
RF
RL
R 1
Rout
Rs +RF
1
gm ⋅Rs 1 +gm ⋅R 1
approx =
RF
Rs R 1
S. C. Reising October 7, 2008
CS Tuned Amplifier
YD GD +j ⋅ω ⋅Ceq
GD gm
ω^2 ⋅ τ 1 ⋅(τ o +τ 2 )
1 +ω^2 ⋅τ 22
⋅ (^) Ceq Cgd^ gm^ τ^1 ω
(^2) τ
⋅(^ − ⋅ o⋅ τ 1 ⋅τ 2 )
1 +ω^2 ⋅τ 22
ωo
L ⋅ ( C +Ceq)
BW
R
1 +GD ⋅R
⋅( C +Ceq)
Yx
j ⋅ω ⋅C gd⋅( 1 +gm ⋅ZL)
1 + j ⋅ω ⋅C (^) gd⋅ZL
approx = j ⋅ω ⋅C (^) gd+j ⋅ ω⋅ gm⋅Z (^) L⋅Cgd
τo
Cgd gm
τ 1 ( Rs +rg) ⋅C gd τ 2 ( Rs +rg) ⋅(C gs +Cgd)
Ceq approx =^ Cgd ⋅ 1 +gm⋅ (R s +rg)
S. C. Reising October 7, 2008