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COMSATS University Islamabad

C O U R S E D E S C R I P T I O N F I L E

CPE231 Electronics I

DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING

COMSATS University Islamabad

C O U R S E D E S C R I P T I O N F I L E

CPE231 Electronics I

DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING

Prepared By: Checked By: Approved By:

transistor modeling, (either) hybrid‐ (or) r (^) e‐model, common‐emitter fixed‐bias configuration, voltage‐ divider bias, effect of load and source resistance, finding current gain, variations of transistor parameters. (C4‐PLO2)

4. Learning Field effect Transistors: Introduction, construction and characteristics of Junction FET (JFET). (C2‐ PLO1)
5. Design and conduct experiments and analyze and interpret the experimental data to derive valid conclusions. (C6‐PLO4)
6. Present and analyze data with effective report writing skills. (A2‐PLO10)

Course Schedule:

3 credit hours/week

One laboratory session/week (3 hours/session)

Topics Covered:

1. Semiconductor material and properties
2. Diode model, equivalent model and circuit analysis
3. Analysis of diode based circuits (rectifiers, clipper, clampers, etc.)
4. Special diodes characteristics and applications
5. Bipolar transistors characteristics and modes of operations
6. DC analysis, dc load line, biasing of bipolar transistor circuits
7. Small signal analysis of bipolar transistor circuits
8. Design and analysis of common bipolar transistor amplifiers
9. Field Effect Transistors.

Assessment Plan:

Theory Quizzes (4) 15% Homework assignments 10% 2 Sessional exams (in class, 60‐80 minutes each, 10%+15%) (^) 25%

Terminal exam (3 hours) 50% Total (theory) 100% Lab work Lab reports (12) 25% 2 Lab sessional 25% Lab project and terminal exam 50% Total (lab) 100% Final marks Theory marks * 0.75 + Lab marks * 0.

Learning Outcomes Assessment plan(Tentative):

Sr. # Course Learning Outcomes Assessment

1. Assignment 1
2. Quiz 1
3. Sessional 1
4. Assignment 2
5. Quiz 2
6. Assignment 3
7. Quiz 3
8. Sessional 2
9. Assignment 4
10. Quiz 4
11. Terminal Table 1: Assessment Plan for Course Learning Outcomes

Course structure/Course schedule:

There is a Laboratory component in all 3+1 credit courses taught at the department. Lab work consists of a minimum of 12 experiments and related assignments, which constitute 25% of the overall course‐ grade. The laboratory experiments include hands‐on exercises as well as computer analysis. This course familiarizes the students with the circuit analysis program called SPICE through laboratory experiments.

Laboratory Resources:

The electronics laboratories are equipped with workbenches and computers to facilitate the experiments outlined in the lab handbook(s) that are periodically updated. The list of software and equipment available is also posted in all labs and is managed by staff dedicated for this purpose. The software required for the course is available online for free download.

Computer Resources:

The department has computer labs that have recommended software installed. For the purposes of this course the circuit analysis program SPICE will be used.

PLOs

CLOs PLO1 PLO2 PLO3 PLO4 PLO5 PLO6 PLO7 PLO8 PLO 9 PLO10PLO11 PL CLO1 (^) C CLO2 (^) C

CLO3 C CLO4 C CLO5 C CLO6 A Table 2: Mapping CLOs to PLOs

PLO Coverage Explanation:

PLO 1‐ Engineering Knowledge:

Calculations in the circuit analysis along with device modeling using ideal, linear and exponential models creates in‐depth knowledge of semiconductor devices. Problem sessions will increase the ability to apply mathematics on the construction of diode, zener diodes, BJT and FET devices.

PLO 2‐ Problem Analysis:

Students are encouraged to first preform the literature survey, collect the data and then analyze the aspects related to the output of systems. Various different circuits having components like Resistor, diode and capacitor, are explored and analyzed in the class room and finally the students are tested for the analysis of different circuits. Quiz and assignments are helpful in the testing process along with the sessionals. The topics related to this learning objective are clippers, clampers, rectifiers, zener diodes, voltage regulators and switches.

PLO4 – Investigation:

The ability to design and conduct experiments, analyse/interpret results and deduce informed conclusions is developed in the students through multiple open‐ended labs.

PLO 10‐ Communication:

In the lab setup the students are asked to perform the experiment and take the data. This collected data is analyzed by the student and finally the conclusion comprehended by the student is required in the report format. The students are also given chance to present some new finding in the presentation format also. (High relevance to course)

PLO 3, 5, 6, 7, 8, 9, 11, 12: These outcomes are not directly addressed in this course.

ANNEXURE‐I

Tentative Lecture Breakdown:

Topics

No. of lectures

Semiconductor devices and Diodes: semiconductor material and properties, Intrinsic/Extrinsic semiconductors, Drift and Diffusion currents and their densities, Excess carriers, The pn‐ Junction, Reverse/Forward biased junctions, Ideal voltage/ current relationship, pn Junction diode, Temperature effect, breakdown voltage, switching transient.

Diode Circuits: dc analysis and models, Piece‐wise linear model, diode circuits, ac equivalent circuits, sinusoidal analysis, Small‐signal equivalent circuit, Special diodes (Solar cell, photo‐ diode, LED, Schottky barrier diode, Zener diode), Diode applications (rectifier circuits, envelop detectors, clippers/clampers), Zener/Photo diode circuits, Multi‐diode circuits

Bipolar Junction Transistors: Transistor structure, npn Transistor and Forward Bias, Leakage current and breakdown voltages, Current‐voltage characteristics, DC analysis and dc load line, Modes of operation, dc analysis of commonly used bipolar transistors, Three basic operations (Switch, digital switch, and amplifier), Transistor biasing (positive/negative) and biasing stability, Integrated circuit biasing

BJT Amplifiers: linear amplifiers, AC equivalent circuit, Small signal Hybrid‐Pi model and analysis, current gain, voltage gain, input/output impedance, Early effect, basic amplifier configurations (voltage, current, transconductance, transresistance amplifiers), design and analysis of Common emitter and Emitter follower amplifiers

Field Effect Transistors: Construction and Characteristics of JFETs, Transfer Characteristics, Depletion‐Type MOSFET, Enhancement‐Type MOSFET