Magneto-Electronics: Experiments and Phenomena, Study notes of Electrical and Electronics Engineering

Various experiments and phenomena in magneto-electronics, including the stern-gerlach experiment, magnetic materials, magnetoresistance, magnetic tunnel junctions, and rkky coupling. Relevant research articles and authors are cited.

Typology: Study notes

Pre 2010

Uploaded on 09/02/2009

koofers-user-85r
koofers-user-85r 🇺🇸

10 documents

1 / 18

Toggle sidebar

This page cannot be seen from the preview

Don't miss anything!

bg1
Magneto-Electronics
Electron Spin: Stern-Gerlach Experiment
Magnetic materials: Spin-dependent DOS
NM/FM Interface: Johnson-Silsbee Expt.
NM/FM Multilayers: Giant
Magnetoresistance (GMR)
FM/Insulator/FM: Magnetic Tunnel
Junctions
pf3
pf4
pf5
pf8
pf9
pfa
pfd
pfe
pff
pf12

Partial preview of the text

Download Magneto-Electronics: Experiments and Phenomena and more Study notes Electrical and Electronics Engineering in PDF only on Docsity!

Magneto-Electronics

  • Electron Spin: Stern-Gerlach Experiment• Magnetic materials: Spin-dependent DOS• NM/FM Interface: Johnson-Silsbee Expt.• NM/FM Multilayers: Giant

Magnetoresistance (GMR)

  • FM/Insulator/FM: Magnetic Tunnel

Junctions

With B Field

Without B Field

SPIN

SPIN

Johnson and Silsbee, PRL 55 1790 (1985)

and PRB 37 5326 (1988)

UNBIASED BIASED

Anisotropic Magneto-Resistance ~2%

Baibich et al., PRL 612472 (1988)

Giant

Magneto-Resistance

I ~50%

c

a

b^

H

RKKY oscillations of

R/R in multilayers

Spin“defect”

FermiSphere

Interlayerspacing

ρ /2 ρ /

ρ /2 ρ /

ρ /2 ρ /

ρ /2 ρ /

Two-Current Model

ρ < ρ

parallel

anti-parallel

-

0

100

35 30 25 20 15 Collector Current [nA]

Magnetic Field [gauss] −ο− ⇒−•− ⇐

Scan Direction

77K

FM1=CoFM2= NiFe

R

P^

R

AP

Magnetoresistance =

R/R

R

AP-

R

P R

P

V +

V +

R/R=

R/R=

1

1

1

-^ +

-^

2

-^

2 (^

-^

2

(^

-^

2 (^

-^

2

(^

(^

2

2

2

(^

)^

(^