Download Material Engineering - Lecture - Deformation and more Lecture notes Material Engineering in PDF only on Docsity!
Deformation and
Strengthening
Mechanisms
Deformation and Strengthening Mechanisms
- (^) Plastic deformation caused by
dislocation movement.
- (^) Slip systems (slip plane, slip direction).
- (^) Resolved Shear Stress
- (^) Strengthening Mechanisms
- (^) Recovery, Recrystallization, Grain
Growth
Edge and Screw Dislocations
- (^) In an edge dislocation, localized lattice distortion exists along the end of an extra half-plane of atoms.
- (^) A screw dislocation results from shear distortion.
- (^) Many dislocations in crystalline materials have both edge and screws components; these are mixed dislocations.
- (^) Dislocation motion leads to plastic deformation.
- (^) An edge dislocation moves in response to a shear stress applied in a direction perpendicular to its line.
- (^) Extra half-plane at A is forced to the right; this pushes the top halves of planes B, C, D in the same direction.
- (^) By discrete steps, the extra 1/2-plane moves from L to R by successive breaking of bonds and shifting of upper 1/2-planes.
- (^) A step forms on the surface of the crystal as the extra 1/2-plane exits.
Dislocation Motion
- (^) The process by which plastic deformation is produced by dislocation motion is called slip (movement of dislocations).
- (^) The extra ½-plane moves along the slip plane.
- (^) Dislocation movement is similar to the way a caterpillar moves. The caterpillar hump is representative of the extra ½-plane of atoms.^7
Slip
When metals are plastically deformed, some fraction (roughly 5%) of energy is retained internally; the remainder is dissipated as heat. Mainly, this energy is stored as strain energy associated with dislocations. Lattice distortions exist around the dislocation line.
Slip Plane {111}: most dense atomic packing, Slip Direction ‹ 110 ›: highest linear density,
Slip System – FCC example
Stress and Dislocation Motion
- (^) Edge and screw dislocations move in response to shear stresses applied along a slip plane in a slip direction.
- (^) Even though an applied stress may be tensile, shear components exist at all but the parallel or perpendicular alignments to the stress direction.
- (^) These are resolved shear stresses (R).
- (^) Crystals slip due to resolved shear stress.
Condition for dislocation motion: crss R cos cos R Critical Resolved Shear Stress
- (^) In response to an applied tensile or compressive stress, slip (dislocation movement) in a single crystal begins when the resolved shear
stress reaches some critical value, crss.
- (^) It represents the minimum shear stress required to initiate slip and is a property of the material that determines when yielding occurs. (cos cos )max 13 crss y
Deformation in a single crystal
- For a single crystal in tension, slip will occur along a number of equivalent and most favorably oriented planes and directions at various positions along the specimen.
- Each step results from the movement of a large number of dislocations along the same slip plane.
- (^) In addition to slip (dislocation movement), plastic deformation can occur by twinning.
- (^) A shear force can produce atomic displacements so that on one side of the plane (the twin boundary), atoms are located in mirror image positions to atoms on the other side.
- (^) Twinning may favorably reorient slip systems to promote dislocation movement. 16
Deformation by Twinning
Strengthening
- (^) The ability of a metal to deform plastically depends on the ability of dislocations to move.
- (^) Hardness and strength are related to how easily a metal plastically deforms, so, by reducing dislocation movement, the mechanical strength can be improved.
- (^) Greater mechanical forces will be required to initiate further plastic deformation.
- (^) To the contrary, if dislocation movement is easy (unhindered), the metal will be soft, easy to deform.
- (^) Grain boundaries are barriers to slip.
- (^) Barrier "strength“ increases with misorientation.
- (^) Smaller grain size: more barriers to slip. yield o k y d 1 / 2
1. REDUCE GRAIN SIZE
Hall-Petch Equation: