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MOSFET Parameters and MOS Amplifier-Basic Electronics-Lab Assignment, Exercises of Electronics

Anna UniversityElectronics

The course gives the students a sound knowledge of Fourier transforms along with Fourier integrals, partial differential equations, advanced vector analysis, complex variables and complex integrals. This lab includes: MOSFET, Parameters, Amplifier, Transistor, N, channel, Enhancement, Simulation, Measurements, Mode, Operation

Typology: Exercises

2011/2012

Uploaded on 08/07/2012

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EE216: Electronics-I Page 1
Department of Electrical Engineering
Faculty Member:____________________
Dated: ________________
Semester:_____________
Section: ________________
EE216: ELECTRONICS-I BEE2
LABORATORY EXERCISE - 10
MOSFET Parameters &
AMPLFIER
GROUP______________
Name
Reg. no.
Report
Marks / 10
Viva
Marks / 5
Total/15
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EE216: Electronics-I Page 1

Department of Electrical Engineering

Faculty Member:____________________ Dated: ________________

Semester:_____________ Section: ________________

EE216: ELECTRONICS-I BEE

LABORATORY EXERCISE - 10

MOSFET Parameters &

AMPLFIER

GROUP______________

Name Reg. no. Report Marks / 10

Viva Marks / 5

Total/

EE216: Electronics-I Page 2

EE 216 ELECTRONICS – I Fall 2011

LABORATORY EXERCISE - 10

MOSFET Parameters & Amplifier

Objective: To study characteristics of an N-Channel Enhancement

Type MOSFET

  1. The MOSFET is arguably the most important type of transistor there is today. This lab gives you an opportunity to examine some characteristics of an N-channel enhancement type MOSFET.

Required Resources

  1. The following components, test equipment and software would be required. a) 2N7000 Transistor b) DMM c) Oscilloscope d) Resistors e) Capacitors f) Power Supply g) PSpice Simulation Software.

The Experiment

  1. Construct the circuit as in Figure 1; the MOSFET is a 2N7000 , N-channel enhancement type device. Use a digital multimeter (DVM) to perform voltage and resistance measurements.

EE216: Electronics-I Page 4

Table 1: Measured data to estimate parameters

Data Point VDD VGS ID

  1. Plot the square root of ID versus VGS. The vertical axis is √. Next, with a straight edge, and the best of your ability, fit a straight line to the data points.

Figure 2: Plot of parameter test data

You will use your graph to estimate two key parameters:

 The intersection of the line with the horizontal axis is an estimate of the threshold voltage VT.  The square of the slope is an estimate of the parameter K. To estimate the slope you can use the crossing with the horizontal axis and a point on the line fairly far from the horizontal axis. Be sure to express the slope M in √ before squaring the slope to produce K.

Vt ________________________

SlopeM  _______________ ………………… (2)

EE216: Electronics-I Page 5

K  M^2 __________________ ………………… (3)

MOSFET Modes of Operation

  1. Build the MOSFET circuit in Figure 3, using the MOSFET from your previous test.
  2. By using different values for the resistor R 1 , you will measure the drain current ID for a range of VDD values.
  3. The drain power supply VDD will be 5v. The gate power supply VGG will be 2.5v.

Figure 3: MOSFET modes test circuit

  1. Use Table 2 to record your data. In each case, use the DVM to measure the voltage across R 1 , the drain-source voltage VDS , and then use Ohm's Law to calculate the drain current ID.

MeasuredVGS ___________________