Understanding the Behavior of PN Junction Diodes: Parasitic Capacitance and Load Line - Pr, Assignments of Basic Electronics

Explanations and solutions to homework problems related to the behavior of pn junction diodes, including the formation of parasitic capacitance when reverse-biased, the calculation of drift current and capacitance, and the concept of load lines. Students will learn about the physical meaning of capacitance and its relationship to reverse-biasing voltage, as well as the significance of dc and ac equivalent circuits in analyzing diode circuits.

Typology: Assignments

Pre 2010

Uploaded on 09/15/2008

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Homework #2
(to be due on Sep 15th, 2008)
Please explain why there is a parasitic junction capacitor across the
diode when it is reverse-biased. (weight:15%)
"Because of the additional positive and negative charges induced in the space-charge
region with an increase in reverse-bias voltage, a capacitance is associated with the pn
junction when a reverse-bias voltage is applied. " Basically, the positive terminal of the
source attracts the negative charges on the n semiconductor, and the negative terminal
attracts the positive charges on the p semiconductor. This action increases the width of the
depletion region. Namely, the diode gets CHARGED and gets capacitance.
Please solve Problem 1.10 (weight:10%)
E=15V/cm
σ=2.2 (Ω-cm)¹
A=10⁻⁴cm²
J(drift current density) = σE = 2.2 × 15 = 33 A/cm²
A(drift current) = 33 A/cm² × 10⁻⁴cm² = .0033 A
At room temperature, Please solve Problem 1.18 (weight:15%)
To forward biasing a P-N junction diode, what is the maximum voltage can be
applied? (weight:10%)
<Vbi
The built-in potential barrier
Ahn, Jeeyun (904067681)
ni at room temp. = 1.5 × 1010cm-3
k = 1.3806503 × 10-23 m2 kg s-2 K-1
a) 0.026 ×ln[(1016)2/ (1.5 × 1010)2] = .697322 V
b) 0.026 ×ln[(1018×1016)/ (1.5 × 1010)2] = .817057 V
c) 0.026 ×ln[(1018)2/ (1.5 × 1010)2] = .936791 V
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Homework #

(to be due on Sep 15

th , 2008)

Please explain why there is a parasitic junction capacitor across the

diode when it is reverse-biased. (weight:15%)

"Because of the additional positive and negative charges induced in the space-charge

region with an increase in reverse-bias voltage, a capacitance is associated with the pn

junction when a reverse-bias voltage is applied. " Basically, the positive terminal of the

source attracts the negative charges on the n semiconductor, and the negative terminal

attracts the positive charges on the p semiconductor. This action increases the width of the

depletion region. Namely, the diode gets CHARGED and gets capacitance.

Please solve Problem 1.10 (weight:10%)

E=15V/cm

σ =2.2 ( Ω -cm)⁻ ¹

A=10⁻⁴cm ²

J(drift current density) = σ E = 2.2 × 15 = 33 A/cm ²

A(drift current) = 33 A/cm ² × 10 ⁻⁴cm ² = .0033 A

At room temperature, Please solve Problem 1.18 (weight:15%)

o forward biasing a P-N junction diode, what is the maximum voltage can be

pplied? (weight:10%)

Vbi

he built-in potential barrier

hn, Jeeyun (904067681)

n i at room temp.

= 1.5 × 10

10 cm

k = 1.3806503 × 10

  • m

2 kg s

  • K -

a) 0.026 × ln[(

16 )

2 / (1.5 × 10

10 )

2 ] = .697322 V

b) 0.026 × ln[(

18 × 10

16 )/ (1.5 × 10

10 )

2 ] = .817057 V

c) 0.026 × ln[(

18 )

2 / (1.5 × 10

10 )

2 ] = .936791 V

At room temperature, Please solve Problem 1.22 and discuss the

physical meaning of capacitance tendency regarding to the reverse

biasing voltage (weight:20%)

o forward biasing a P-N junction diode, what is the maximum voltage can be

pplied? (weight:10%)

Vbi

he built-in potential barrier

hn, Jeeyun (904067681)

C j.

= C j

(1 + V R

/ V bi

)

-1/

V bi

= 0.026 × ln[(

15 × 10

16 )/ (1.5 × 10

10 )

2 ] = 0.

a) C j

= 0.4 × (1 + 1 / 0.637455)

-1/ =0.4 × .623936 = .249574 pF

b) C j

= 0.4 × (1 + 3 / 0.637455)

-1/ =0.4 × .418626 = .16745 pF

c) C j

= 0.4 × (1 + 5 / 0.637455)

-1/ =0.4 × .336266 = .134506 pF

Please illustrate the physical meaning of the load line? Whose I-V

relationship is the load line to describe (weight:20%)

Conceptually, in the load line method, we consider the rest of the circuit

excluding the diode as one load. This load should have a resistance; the

entire circuit excluding the diode works as a resistor. This means that we

consider the circuit in two parts only: a resistor and a diode. The resistance

of the virtual resistor draws a straight line on the V vs I graph. The line can

be vertical or horizontal at certain circumstance.

Please explain the significance of the DC equivalent circuit and its

analysis in the AC analysis of a circuit with diode? In which condition,

using a equivalent resistor, r d

, as shown in Figure1.35(b), is good

enough? Whereas, in which condition, we need to parallel the

additional capacitors, as shown in Figure 1.37? (weight:20%)