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Microelectronics Technology Homework 5: P-N Junction Diode Analysis, Assignments of Electrical and Electronics Engineering

Rensselaer Polytechnic Institute (RPI)Electrical and Electronics Engineering

A homework assignment for ecse-2210 microelectronics technology course, focusing on the analysis of a p-n junction diode. Students are required to calculate various quantities such as reverse saturation current components, minority carrier concentrations, and electron/hole current. They are also asked to sketch the minority carrier concentration profile and compare forward voltages to the built-in voltage.

Typology: Assignments

Pre 2010

Uploaded on 08/09/2009

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ECSE-2210 Microelectronics Technology
Homework 5
Reading Assignment: Pages 235-282
1. (Problem 6.10 in text). The figure below is a dimensioned plot of the steady state carrier
concentration inside a p-n junction diode at 300 K.
a. Is the diode forward biased or reverse biased? Explain.
b. Do low-level injection conditions prevail in the quasi-neutral regions? Explain.
c. What are the p-side and n-side doping concentrations?
d. Determine the applied voltage, VA.
1015
1014
log scale, units in cm-3
pf2

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p p

n n

n p p n

p n

n p 0

ECSE-2210 Microelectronics Technology Homework 5

Reading Assignment: Pages 235-

  1. (Problem 6.10 in text). The figure below is a dimensioned plot of the steady state carrier concentration inside a p-n junction diode at 300 K. a. Is the diode forward biased or reverse biased? Explain. b. Do low-level injection conditions prevail in the quasi-neutral regions? Explain. c. What are the p-side and n-side doping concentrations? d. Determine the applied voltage, V A.

1015 1014

log scale, units in cm-

  1. An abrupt silicon p-n junction diode has the following characteristics. P-side: N-side:

N A = 10 16 cm-3^ N D = 4 × 10^16

μn = 1000 cm^2 /Vs μp = 350 cm^2 /Vs

τp = 10 -7^ sec τp = 10 -7^ sec

Area A = 10 -2^ cm^2 Calculate the following (a-d) quantities: (a) Reverse saturation hole current component. (b) Reverse saturation electron current component. (c) Minority carrier concentrations at the edge of the depletion layer, n p(0) and p n (0), for a forward voltage of 0.6 V. (d) Electron and hole current for the bias condition of (c). (e) Make a rough sketch of the minority carrier concentration profile in the quasi-neutral regions for the bias condition of (c). (f) Suppose the forward voltage is increased to a value such that the injected minority carrier concentration at the n-side depletion layer edge is equal to the doping concentration (i.e., 4 × 10 16 cm-3^ ). Calculate this forward voltage. Compare this voltage to the built-in voltage. Comment on the results. (g) Suppose the critical electric field at breakdown for this diode is 10^6 V/cm, and then calculate the breakdown voltage of this diode.