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Solid-State Electronic Devices: R-G Statistics and Minority Carrier Lifetime (Spring 2004), Study notes of Electrical and Electronics Engineering

University of Florida (UF)Electrical and Electronics Engineering

A lecture outline for eel 3396: solid-state electronic devices, focusing on r-g statistics, including center recombination, minority carriers, majority carriers, excess carriers, low-level injection, capture coefficients, and minority carrier lifetime. Additionally, it covers photogeneration, absorption coefficient, penetration depth, and lifetime measurement through phthoconductivity decay measurement. This material is from chapter 3.3.3, 3.3.4, and 3.4.1 of the course text.

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Uploaded on 09/17/2009

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EEL 3396: Solid-State Electronic Devices (Spring 2004) Dr. Hui-Kai Xie
Lecture 11
Outline
Chapter 3.3.3 R-G Statistics
• R-G center recombination
o Minority carriers
o Majority carriers
o Excess carriers
o Low-level injection
o Capture coefficients
o Minority carrier lifetime
Chapter 3.3.4 Minority Carrier Lifetime
• Photogeneration
o Absorption coefficient
o Penetration depth
• Lifetime Measurement
o Phtoconductivity Decay Measurement
Chapter 3.4.1 Continuity Equations
Reading: Chapter 3.3.3, 3.3.4, 3.4.1

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EEL 3396: Solid-State Electronic Devices (Spring 2004) Dr. Hui-Kai Xie

Lecture 11 Outline

Chapter 3.3.3 R-G Statistics

  • R-G center recombination o Minority carriers o Majority carriers o Excess carriers o Low-level injection o Capture coefficients o Minority carrier lifetime

Chapter 3.3.4 Minority Carrier Lifetime

  • Photogeneration o Absorption coefficient o Penetration depth
  • Lifetime Measurement o Phtoconductivity Decay Measurement

Chapter 3.4.1 Continuity Equations

Reading: Chapter 3.3.3, 3.3.4, 3.4.