ECE 5320/6322: Problems 10-12 - Fall 2014, Exercises of Communication

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UNIVERSITY OF UTAH
ELECTRICAL AND COMPUTER ENGINEERING DEPARTMENT
ECE 5320/6322 Problems 10-12 Fall 2014
10. The S-matrix of a three-port circuit is given as follows:
0.4 0.25j 0.5
S 0.25 j 0.2 0.6 j
0.5 0.6 j 0.2
a. Is it a reciprocal circuit? Give reasons.
b. Is it a lossless circuit? Give reasons.
c. Draw the signal flow graph of the circuit.
d. Calculate the reflection coefficient at port 1 if ports 2 and 3 are connected to loads that
are mismatched each with a reflection coefficient of 0.4.
e. Calculate the insertion loss between ports 1 and 2 for the above circuit with mismatched
loads connected as in part d.
f. Calculate the power delivered to the load at port 3 as a fraction of the power input to
port 1.
11. Following Example 11.1 on p. 539 of the text, calculate the power gains of a microwave
amplifier using a transistor (e.g., Fujitsu FHX04FA/LG) with S-parameters at 10 GHz as
follows:
11
S0.653160;
12
S0.14

21
S3.220;
22
S 0.552 126
a. Calculate the power gain of the amplifier using Eq. 11.8 for L0
.
b. Using Eq. 11.12, the available power gain input and output circuits are approximately
conjugate-matched, i.e.
s11 L22
~S and ~S

pf2

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UNIVERSITY OF UTAH

ELECTRICAL AND COMPUTER ENGINEERING DEPARTMENT

ECE 5320/6322 Problems 10-12 Fall 2014

  1. The S-matrix of a three-port circuit is given as follows:

0.4 0.25j 0. S 0.25j 0.2 0.6 j 0.5 0.6 j 0.

 ^ 

a. Is it a reciprocal circuit? Give reasons. b. Is it a lossless circuit? Give reasons. c. Draw the signal flow graph of the circuit. d. Calculate the reflection coefficient at port 1 if ports 2 and 3 are connected to loads that are mismatched each with a reflection coefficient of 0.4. e. Calculate the insertion loss between ports 1 and 2 for the above circuit with mismatched loads connected as in part d. f. Calculate the power delivered to the load at port 3 as a fraction of the power input to port 1.

  1. Following Example 11.1 on p. 539 of the text, calculate the power gains of a microwave amplifier using a transistor (e.g., Fujitsu FHX04FA/LG) with S-parameters at 10 GHz as follows:

S 11  0.653   160 ^ ; S 12  0.1   4  S 21  3.2  20 ^ ; S 22  0.552   126 

a. Calculate the power gain of the amplifier using Eq. 11.8 for (^)  (^) L  0. b. Using Eq. 11.12, the available power gain input and output circuits are approximately conjugate-matched, i.e.  (^) s ~ S 11 ^ and L ~ S 22 

c. The transducer power gain from Eq. 11.13 when input and output circuits are approximately conjugate matched, i.e.

 (^) s ~ S 11 ^ and L ~ S 22 

d. Using Eq. 11.14, the transducer power gain when both the input and output are matched for zero reflection coefficient L  s  0 (in contrast to conjugate matching). e. Which of the above gains are the highest?

  1. The ABCD parameters of the first entry in Table 4.1 of the Text were derived in Example 4.6. Verify the ABCD parameters of the fifth and sixth entries of Table 4.1.