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ECE 250 Exam 1 - Fall 2002 - Prof. Marc E. Herniter, Exams of Electrical and Electronics Engineering

Rose-Hulman Institute of Technology (RHIT)Electrical and Electronics Engineering

Prof. Marc E. Herniter

The solutions to exam 1 for ece 250, a university-level electrical engineering course, held in fall 2002. The exam covers topics such as circuit analysis, waveforms, transfer curves, and semiconductor design. Students are required to plot voltage waveforms, sketch transfer curves, and determine the required dopant impurity concentration for a given electron concentration in silicon.

Typology: Exams

Pre 2010

Uploaded on 08/18/2009

koofers-user-5n1 🇺🇸

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ECE 250 Exam 1

Fall 2002

Name____________________

I pledge on my honor that I did not copy any of this exam, and that this work is entirely my own.

Furthermore, I did not use PSpice during this exam.

____________________________________

Discover Exams of Electrical and Electronics Engineering Rose-Hulman Institute of Technology (RHIT)

Partial preview of the text

Download ECE 250 Exam 1 - Fall 2002 - Prof. Marc E. Herniter and more Exams Electrical and Electronics Engineering in PDF only on Docsity!

ECE 250 Exam 1

Fall 2002

Name____________________

I pledge on my honor that I did not copy any of this exam, and that this work is entirely my own.

Furthermore, I did not use PSpice during this exam.

____________________________________

Problem 1 (30 Points):

Plot Vo(t) and Vin(t) for the circuit below. Indicate numerical values for all breakpoints. Let Vin be a ±

15 volt triangle wave. The breakdown voltage of the Zener is 5 volts.

R

Vin

D

a) Sketch the waveforms using the graph below (15 Points):

Time

0s 0.2s 0.4s 0.6s 0.8s 1.0s 1.2s 1.4s 1.6s 1.8s 2.0s 0

b) Sketch the transfer curve, Vo versus Vin (15 Points).

Problem 2 (10 Points):

What function does the circuit formed by the resistor, capacitors, diodes, and ±15 V supplies perform?

Indicate numerical values in your description. Do not assume ideal diodes.

C

100u

D

C

100u

D

+15 V

R

Vin 1k

-15 V

U1A

LM

OUT

V+

V-

Problem 3 (30 Points):

Plot Vo(t) and Vin(t) for the circuit below. Indicate numerical values for all breakpoints. Let Vin be a ±

15 volt triangle wave.

D

R

D1 (^) Vo

Vin +

R

D

R

a) Sketch the waveforms using the graph below:

Time

0s 0.2s 0.4s 0.6s 0.8s 1.0s 1.2s 1.4s 1.6s 1.8s 2.0s 0

ECE 250 Exam 1 - Fall 2002 - Prof. Marc E. Herniter, Exams of Electrical and Electronics Engineering

Related documents

Partial preview of the text

Download ECE 250 Exam 1 - Fall 2002 - Prof. Marc E. Herniter and more Exams Electrical and Electronics Engineering in PDF only on Docsity!

ECE 250 Exam 1

Fall 2002

Name____________________

I pledge on my honor that I did not copy any of this exam, and that this work is entirely my own.

Furthermore, I did not use PSpice during this exam.

____________________________________

Problem 1 (30 Points):

Plot Vo(t) and Vin(t) for the circuit below. Indicate numerical values for all breakpoints. Let Vin be a ±

15 volt triangle wave. The breakdown voltage of the Zener is 5 volts.

R

R

D

a) Sketch the waveforms using the graph below (15 Points):

b) Sketch the transfer curve, Vo versus Vin (15 Points).

Problem 2 (10 Points):

What function does the circuit formed by the resistor, capacitors, diodes, and ±15 V supplies perform?

Indicate numerical values in your description. Do not assume ideal diodes.

C

D

C

D

+15 V

R

-15 V

U1A

LM

OUT

V+

V-

Problem 3 (30 Points):

Plot Vo(t) and Vin(t) for the circuit below. Indicate numerical values for all breakpoints. Let Vin be a ±

15 volt triangle wave.

D

R

R

R

D

D

R

R

a) Sketch the waveforms using the graph below:

b) Sketch the transfer curve, Vo versus Vin (15 Points).

Problem 4 (30 Points):

A silicon semiconductor is to be designed such that the majority carrier electron concentration is

no=7× 1015 cm-3.

a) Should donor or acceptor impurity atoms be added to intrinsic silicon to achieve this electron

concentration? (5 points)

b) What concentration of dopant impurity atoms is required?

c) In this silicon material, the minority carrier hole concentration is to be no larger than po=10^6 cm-3.

Determine the maximum allowable temperature.