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Material Type: Assignment; Professor: Banatoski; Class: Solid St Electr Devices; Subject: Electrical Engineering; University: University of Texas - Pan American; Term: Fall 2008;
Typology: Assignments
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ELEE4328 page 1 of 1 Class problem CL1 Fall 2008 CL1. Reference Figs 1-7, 1-8,, 1-9 and the http://jas.eng.buffalo.edu web site clicking on the first blue highlight in the written text on the right "Unit cell with a list of materials" and grabbing with the mouse to rotate the figure in 3D. Calculate the volume density of atoms of Silicon (number of atoms/cm3) given that the lattice constant of Si is 5.43Angstroms. Calculate the area density of atoms (number/cm2) on the (110) plane and (111) plane. From your answer to Problem 1.9 (a) for the (100) area density and the answer in this problem for the (111) area density if more closely packed surface atoms are less sensitive to surface defects such as interstitial (between atoms) defects which plane would have fewer surface defects and associated surface charge? If having some of the bonds perpendicular to the surface results in better sawing and cutting which plane has the best breakage.