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Global
edition
Solid State
electronic devices
Seventh edition
Ben G. Streetman • Sanjay Kumar Banerjee
Solid State Electronic Devices
SevenTh edITIOn GLOBAL edITIOn
Solid State
electronic devices
BEn G. StrEEtMan anD Sanjay KuMar BanErjEE Microelectronics Research Center Department of Electrical and Computer Engineering The University of Texas at Austin
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The rights of Ben G. Streetman and Sanjay Kumar Banerjee to be identified as the authors of this work have been asserted by them in accordance with the Copyright, Designs and Patents Act 1988.
Authorized adaptation from the United States edition, entitled Solid State Electronic Devices, ISBN 978-0-13-335603-8, by Ben G. Streetman and Sanjay Kumar Banerjee, published by Pearson Education © 2015.
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ISBN 10:1-292-06055-
ISBN 13: 978-1-292-06055-
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6 Contents
13
PreFACe
This book is an introduction to semiconductor devices for undergraduate electrical engineers, other interested students, and practicing engineers and scientists whose understanding of modern electronics needs updating. The book is organized to bring students with a background in sophomore physics to a level of understanding that will allow them to read much of the current literature on new devices and applications.
GOalS
what iS nEw in thiS EDitiOn
An undergraduate course in electronic devices has two basic purposes: (1) to provide students with a sound understanding of existing devices, so that their studies of electronic circuits and systems will be meaningful and (2) to develop the basic tools with which they can later learn about newly developed devices and applications. Perhaps the second of these objectives is the more important in the long run; it is clear that engineers and scientists who deal with electronics will continually be called upon to learn about new devices and processes in the future. For this reason, we have tried to incorporate the basics of semiconductor materials and conduction processes in solids, which arise repeatedly in the literature when new devices are explained. Some of these concepts are often omitted in introductory courses, with the view that they are unnecessary for understanding the fundamentals of junctions and transistors. We believe this view neglects the important goal of equipping students for the task of understanding a new device by reading the current literature. Therefore, in this text most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices.
- updated discussion of MOS devices, both in the underlying theory of ballistic FETs as well as discussion of advanced MOSFETs such as FinFETs, strained Si devices, metal gate/ high-k devices, III-V high channel mobility devices
- updated treatment of optoelectronic devices, including high bandgap nitride semiconductors and quantum cascade lasers
- brand new section on nanoelectronics to introduce students to excit- ing concepts such as 2D materials including graphene and topologi- cal insulators, 1D nanowires and nanotubes, and 0D quantum dots;
- discussion of spintronics, and novel resistive and phase change memories
- about 100 new problems, and current references which extend con- cepts in the text.
Preface 15
The first four chapters of the book provide background on the nature of semiconductors and conduction processes in solids (Chapters 3, 4). Included is a brief introduction to quantum concepts (Chapter 2) for those students who do not already have this background from other courses. Chapter 5 describes the p-n junction and some of its applications. Chapters 6 and 7 deal with the principles of transistor operation. Chapter 8 covers optoelectronics, and Chapter 9 discusses integrated circuits. Chapter 10 applies the theory of junctions and conduction processes to microwave and power devices. A com- pletely new section on nanoelectronics has been added. All of the devices covered are important in today’s electronics; furthermore, learning about these devices should be an enjoyable and rewarding experience. We hope this book provides that kind of experience for its readers.
aCKnOw lEDGMEntS
The seventh edition benefits greatly from comments and suggestions pro- vided by students and teachers of the first six editions. The book’s readers have generously provided comments which have been invaluable in devel- oping the present version. We remain indebted to those persons mentioned in the Preface of the first six editions, who contributed so much to the development of the book. In particular, Nick Holonyak has been a source of continuing information and inspiration for all seven editions. Additional thanks go to our colleagues at UT–Austin who have provided special assis- tance, particularly Leonard Frank Register, Emanuel Tutuc, Ray Chen, Ananth Dodabalapur, Seth Bank, Misha Belkin, Zheng Wang, Neal Hall, Deji Akinwande, Jack Lee, and Dean Neikirk. Hema Movva provided useful assistance with the typing of the homework solutions. We thank the many companies and organizations cited in the figure captions for generously pro- viding photographs and illustrations of devices and fabrication processes. Bob Doering at TI, Mark Bohr at Intel, Chandra Mouli at Micron, Babu Chalamala at MEMC and Kevin Lally at TEL deserve special mention for the new pictures in this edition. Finally, we recall with gratitude many years of association with Joe Campbell, Karl Hess, and the late Al Tasch, valued colleagues and friends.
Ben G. Streetman Sanjay Kumar Banerjee
The publishers would like to thank the following for their contribution to the Global Edition:
Contributor: Rikmantra Basu , Assistant Professor, Electronics and Communication Engi- neering (ECE) Department, National Institute of Technology (NIT) Delhi
Reviewers: Sunanda Khosla (writer) Prof. Tan Chuan Seng , Nanyang Technological University Prof. Dr. habil. Jörg Schulze , University of Stuttgart
PrenTICe hALL SerIeS In SOLId STATe PhYSICAL eLeCTrOnICS nick holonyak Jr., editor
Cheo FIBer OPTICS: devICeS And SYSTeMS SeCOnd edITIOn
haus wAveS And FIeLdS In OPTOeLeCTrOnICS
Kroemer QuAnTuM MeChAnICS FOr enGIneerInG, MATerIALS SCIenCe,
And APPLIed PhYSICS
nussbaum COnTeMPOrArY OPTICS FOr SCIenTISTS And enGIneerS
Peyghambarian/Koch/Mysyrowicz InTrOduCTIOn TO SeMICOnduCTOr OPTICS
Shur PhYSICS OF SeMICOnduCTOr devICeS
Soclof deSIGn And APPLICATIOnS OF AnALOG InTeGrATed CIrCuITS
Streetman/Banerjee SOLId STATe eLeCTrOnIC devICeS SevenTh edITIOn
verdeyen LASer eLeCTrOnICS ThIrd edITIOn
wolfe/holonyak/Stillman PhYSICAL PrOPerTIeS OF SeMICOnduCTOrS
18 About the Authors
Sanjay Kumar Banerjee is the Cockrell Chair Professor of Electrical and Computer Engineering, and Director of the Microelectronics Research Center at The University of Texas at Austin. He received his B.Tech. from the Indian Institute of Technology, Kharagpur, and his M.S. and Ph.D. from the University of Illinois at Urbana-Champaign in 1979, 1981, and 1983, respectively, in electrical engineering. He worked at TI from 1983–1987 on the world’s first 4Megabit DRAM, for which he was a co-recipient of an ISSCC Best Paper Award. He has more than 900 archival refereed publications and conference papers, 30 U.S. patents, and has supervised over 50 Ph.D. students. His hon- ors include the NSF Presidential Young Investigator Award (1988), the Texas Atomic Energy Centennial Fellowship (1990–1997), Cullen Professorship (1997–2001), and the Hocott Research Award from the University of Texas. He has received the ECS Callinan Award (2003), Industrial R&D 100 Award (2004), Distinguished Alumnus Award, IIT (2005), IEEE Millennium Medal (2000) and IEEE Andrew S. Grove Award (2014). He is a Fellow of IEEE, APS and AAAS. He is interested in beyond-CMOS nanoelectronic transistors based on 2D materials and spintronics, fabrication and modeling of advanced MOSFETs, and solar cells.
Solid State Electronic Devices
