Biasing Stability Factor Different Methods for Transistor Biasing, Study Guides, Projects, Research of Art

It is most widely used in linear discrete circuits because it provides good bias stability. It is also called universal bias circuit or base bias with one ...

Typology: Study Guides, Projects, Research

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UNIT II
TRANSISTOR BIASING CIRCUITS ANS SMALL SIGNAL ANALYSIS OF BJT
AMPLIFIERS 9 Hrs.
Biasing- Types of biasing- DC equivalent circuit of BJT- Load Line-DC and AC Load
Line Analysis Hybrid Model of BJT- Hybrid Model Analysis of CE, CB, CC -
Calculation of Input Impedance, Output Impedance, Voltage Gain, Current Gain
using hybrid model- Approximate Model of BJT- CE, CB and CC Analysis- Small
signal equivalent circuit of BJT- Small Signal Analysis of CE, CB and CC.
Biasing
For proper working of a transistor, it is essential to apply external voltages of correct
polarity across its emitter-base and collector-base junctions.
emitter-base junction is always forward biased
collector-base junction is always reverse-biased
This type of biasing is known as FR biasing
Stability Factor
Different Methods for Transistor Biasing
Some of the methods used for providing bias for a transistor are :
1. Base Bias or Fixed Current Bias
It is not a very satisfactory method because bias voltages and currents do not
remain constant during transistor operation.
2. Base Bias with Emitter Feedback
This circuit achieves good stability of dc operating point against changes in β with
the help of emitter resistor which causes degeneration to take place.
3. Base Bias with Collector Feedback
It is also known as collector-to-base bias or collector feedback bias. It provides better
bias stability.
4. Base Bias with Collector And Emitter Feedbacks
It is a combination of (2) and (3) above.
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UNIT – II

TRANSISTOR BIASING CIRCUITS ANS SMALL SIGNAL ANALYSIS OF BJT

AMPLIFIERS 9 Hrs. Biasing- Types of biasing- DC equivalent circuit of BJT- Load Line-DC and AC Load Line Analysis – Hybrid Model of BJT- Hybrid Model Analysis of CE, CB, CC - Calculation of Input Impedance, Output Impedance, Voltage Gain, Current Gain using hybrid model- Approximate Model of BJT- CE, CB and CC Analysis- Small signal equivalent circuit of BJT- Small Signal Analysis of CE, CB and CC.

Biasing

For proper working of a transistor, it is essential to apply external voltages of correct polarity across its emitter-base and collector-base junctions.  emitter-base junction is always forward biased  collector-base junction is always reverse-biased This type of biasing is known as FR biasing

Stability Factor

Different Methods for Transistor Biasing

Some of the methods used for providing bias for a transistor are :

1. Base Bias or Fixed Current Bias It is not a very satisfactory method because bias voltages and currents do not remain constant during transistor operation. 2. Base Bias with Emitter Feedback This circuit achieves good stability of dc operating point against changes in β with the help of emitter resistor which causes degeneration to take place. 3. Base Bias with Collector Feedback It is also known as collector-to-base bias or collector feedback bias. It provides better bias stability. 4. Base Bias with Collector And Emitter Feedbacks It is a combination of (2) and (3) above.

5. Emitter Bias with Two Supplies This circuit uses both a positive and a negative supply voltage. Here, base is at

approximately 0 volt i.e. V (^) B ≅ 0.

6. Voltage Divider Bias It is most widely used in linear discrete circuits because it provides good bias stability. It is also called universal bias circuit or base bias with one supply.

Base Bias with Emitter Feedback

Base Bias with Collector and Emitter Feedbacks In the circuit of Fig., both collector and emitter feedbacks have been used in an attempt to reduce circuit sensitivity to changes in β. If β increases, emitter voltage increases but collector voltage decreases. It means that voltage across RB is reduced causing IB to decrease thereby partially off-setting the increase in β.

Under saturation conditions, V (^) CC is distributed over RL and RE.

Assuming IB to be negligible as compared to IC , we get, IC(sat) = V (^) CC / ( RE + RL ).

Emitter Bias with Two Supplies

This circuit gives a reasonably stable Q -point and is widely used whenever two supplies (positive and negative) are available. Its popularity is due to the fact that IC is essentially independent of β.

(b) CE Circuit  Fig. shows the dc equivalent circuit of an NPN transistor when connectedin the CE configuration.  As per the polarities of transistor terminals shown in Fig.(a), base current flow from B to E and collector current from C to E.  In an ideal CE transistor, leakage current is ignored and a.c beta is considered as equal to dc beta.

DC Load Line

 DC load line of a transistor is a straight line jointing cut-off and saturation points.

 For the CE circuit, the load line is shown in figure and A is the cut-off point and B is the saturation point.

 The load line can be drawn if only VCC and RL are known  Incidentally slope of the load line AB = – 1/ RL  The above given equation can be written as

 It is a linear equation similar to y = – mx + c  The graph of this equation is a straight line whose slope is m = – 1/ RL

 The cut-off point for this line is where VCE = VCC , also written as VCE(cut-off).

 Saturation point is given by IC = VCC/RL, also written as IC(sat).

Active Region

 All operating points (like C, D, E etc. in Fig.) lying between cut-off and saturation points form the active region of the transistor

 In this region, E / B junction is forward-biased and C/B junction is reverse- biased (conditions necessary for the proper operation of a transistor)

Quiescent Point

 It is a point on the dc load line, which represents the values of IC and V (^) CE that exist in a transistor circuit when no input signal is applied

 It is also known as the dc operating point or working point

 The best position for this point is midway between cut-off and saturation points where VCE = ½ VCC (like point D in Fig.)

AC Load Line

 It is the line along which Q-point shifts up and down when changes in output

voltage and current of an amplifier

ie = hfb ie + hob veb

 These equations are self-evident because applied voltage across input terminals must equal the drop over hib and the generator voltage  Similarly, current ic in the output terminals must equal the sum of two branch currents  As per current convention, collector ie is shown flowing inwards though actually this current flows outwards as shown by the arrow inside the ac current source  Similarly, ac voltage polarities have been taken by considering upper terminal positive and lower one as negative  It may be noted that no external dc biasing resistor or ac voltage sources have been connected to the equivalent circuit as yet.  Incidentally, it may be noted that the ac equivalent circuit contains a Thevenin's circuit in the input and a Norton’s circuit in the output.  It is all the reason to call it a hybrid equivalent circuit

(b) Hybrid CE Circuit

 The hybrid equivalent of the transistor alone when connected in CE configuration is shown in Fig.  Its V/I characteristics are described by the following equations

 Input signal source across its input terminals and load resistance across output terminals may be connected

(c) Hybrid CC Circuit

 The hybrid equivalent of a transis tor alone when connected in CC configu ration is shown in Fig.

 Its V/I characteristics are described by the following equations

 Input signal source across its input terminals BC and load resistance across output terminals EC may be connected in order to get a CC amplifier

Transistor Amplifier Formulae using h -parameters

 As shown in Fig., if we add a signal source across input terminals 1-1 of a transistor and a load resistor across its output terminals 2–2, we get a small-signal, low- frequency hybrid model of a transistor amplifier.

 It is valid for all the three configurations and holds good for all types of load whether a resistance of an impedance. We will now find expressions for its gains and impedances

Before undertaking the above deriva tions, let us consider different components in the hybrid model of Fig.

 The input resistance looks like a resistance (hi) in series with a voltage generator (hr ν 2 )

 The overall current gain Ais is given by

(ii) Input Impedance

 It is defined as the resistance when looking into the amplifier from its input terminals. Hence, rin = v 1 /i 1.

(iii) Voltage Gain

 Av = v 2 / v 1. It is also known as the internal voltage gain of the transistor.

 It is different from Avs = v 2 / vs which is the gain from the source to the output terminals and is known as stage gain or overall gain.

 As seen from above, v 2 =^ – Ai i 2 rL and v 1 = i 1 rin

(iv) Output Impedance

Taking Vs=

(v) Power Gain

The above formulae are summarized as,

1. Input Impedance

 When looking into the base-emitter terminals of the transistor, hie is in series with hre

 For a CE circuit, hre is very small so that hre v 0 is negligible as compared to the drop over hie

 Hence, rin= hie

 Ignoring hrevo,

2. Output Impedance

Looking back into the collector and emitter terminals of the transistor in Fig. (b),

ro ≅ 1/hoe.

3. Voltage Gain

4. Current Gain 5. Power Gain

Common Collector h -parameter Analysis

The CC transistor circuit and its h-parameter equivalent are shown in Fig.

One can make quick approximations of CC gains and impedance if one remembers that

hre = 1 i.e. all of ν (^) o is fed back to the input (Art. 59.23).

1. Input Impedance

vin = ib hic + hrc ν (^) o = ibhic + ν (^) o = ib hic + ie RL

= ibhic + hfe ib RL = ib (hic + hfe RL)

(i) There is a ‘feedback’ of the output voltage into the input voltage because of the transistor’s non-unilateral behaviour,. This feedback is represented by a voltage-controlled generator hrv 2 as shown in Fig.

By definition, an ideal amplifier is one which responds only to signals applied to its input terminals. It should not do the reverse i.e. reproduce at the input any portion of the ac signal applied at the output. Such an ideal one-way device is called a unilateral device. A real transistor cannot be unilateral because of unaviodable interaction between its input and output circuits. Therefore, not only its output responds to its input but, to a lesser degree, its input also responds to its output.

(ii) even when input circuit is open, there is some effective value of conductanece when looking into the transistor from its output terminals. It is represented by h 0.

Approximate hybrid formulae