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D – diffusivity or diffusion coefficient, m2/s ... The rate of compositional change is equal to the diffusivity times the rate of the change of.
Typology: Schemes and Mind Maps
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Chapter 5
Diffusion : the movement of particles in a solid from an area of high concentration to an area of low concentration, resulting in the uniform distribution of the substance
Diffusion is process which is NOT due to the action of a force , but a result of the random movements of atoms ( statistical problem )
Chapter 5
Recall: Solvent – the majority atom type (or host atoms): Solute – the element with lower concentration Substitutional – a solid solution in which the solute atoms are replaced by solute Interstitial – solute atoms are located in gaps between host atoms
Consider diffusion of solute atoms (b) in solid state solution (AB) in direction x between two parallel atomic planes (separated by ∆x)
For a steady-state diffusion,
J – flux of atoms, atoms/(m^2 s): the number of particles which pass through a unit area in a unit of time;
dC/dx – concentration gradient, atoms/m 4
Chapter 5
For steady-state diffusion condition ( no change in the system with time ), the net flow of atoms is equal to the
3
2 2
‘-’ sign: flux direction is from the higher to the lower concentration; i.e. it is the opposite to the concentration gradient
Chapter 5
In practice the concentration of solute atoms at any point in the material changes with time – non-steady-state diffusion
For non-steady-state condition, diffusion
The rate of compositional change is equal to the diffusivity times the rate of the change of (^2) the concentration gradient
2
2 2
2 2
2
Change in concentration in 2 semi-infinite rods of Cu and Ni caused by diffusion, From G. Gottstein “Physical Foundations of Material Science”
Chapter 5
Curve of the error function erf (z) for
Chapter 5
Q: Consider the gas carburizing of a gear of 1018 steel (C 0.18 wt %) at 927°C. Calculate the time necessary to increase the C content to 0.35 wt % at 0.40 mm below the surface of the gear. Assume the C content at the surface to be 1.15 wt % and that the nominal C content of the steel gear before carburizing is 0.18 wt %. D ( C in γ iron) at 927°C = 1.28 × 10-11^ m^2 /s
Chapter 5
Ex.: self diffusion of Cu atoms in Cu crystal
2. Interstitial diffusion – movement of atoms from one interstitial site to another neighboring interstitial site without permanent displacement any of the atoms in the matrix crystal lattice
Ex.: C diffusion in BCC iron
Chapter 5
The simplest point defect is the vacancy (V) – an atom site from which an atom is missing
vacancy
kT
E
V
V
−
k – Boltzmann constant k = 1.38 ×10-23^ J K-1^ ; or 8.62 ×10-5^ eV K-
Chapter 5
3 1 eV 1 eV 2 eV
6 0.2 eV 3.4 eV 3.6 eV
4 0.6 eV 3.4 eV 4 eV
1 8 eV - 8 eV
Migration Formation Total
Chapter 5
From G.Gottstein “Physical Foundations of Material Science”
Chapter 5
Jump frequency Γ [s -1] of an atom is given by:
kT
G (^) m
−
Usually ν ≅ 10 13 [s -1] vibrational frequency of the atom
There is a fundamental relationship between the jump
independent of mechanism and crystal structure:
2 2
λ – the jump distance of the diffusing atom τ =1/Γ – the time interval between two jumps
Chapter 5
Can be derived from an atomistic considerations of the diffusion processes
2 2
C atoms are located on the octahedral interstitial sites (black circles)
Only ¼ of possible jumps of C atoms lead to flux in +x Only 2/3 of all C atoms can jump in x direction
Chapter 5
kT
E E
−^ −
where k (^) B = 1.38×10-23^ J/(atom K) - Boltzmann’s constant
kT
E
total
C e N
n −* = ×
Chapter 5
The rate of many chemical reaction as a function of temperature as follows :
RT
E (^) A
−
R = 8.314 J mol -1^ K -1; or 1.987cal mol -1K -
Chapter 5
If we rewrite in natural log plot:
y = b + m × x
or in logarithmic log plot:
Chapter 5
Q.: The diffusivity of Ag atoms in solid silver metal is 1.0X10^17 m^2 /s at 500o^ C and 7.0x10-13^ m^2 /s at 1000o^ C. Calculate the activation energy (J/mole) for the diffusion of Ag in Ag in the T range 500 to 1000 oC.
Chapter 5
Q: If boron, B, is diffused into a thick slice of Si with no previous B in it at a temperature of 1100°C for 5 h, what is the depth below the surface at which the concentration is 10^17 atoms/cm^3 if the surface concentration is 10^18 atoms/cm3? D = 4 × 10-13^ cm^2 /s for B diffusing in Si at 1100°C.
Chapter 5
RT
E
o
A
−
2
2