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Comparison of Silicon p-n Junction Diodes: Voltage, Width, Current, and Carrier Profiles -, Assignments of Electrical and Electronics Engineering

Rensselaer Polytechnic Institute (RPI)Electrical and Electronics Engineering

Prof. E. Fred Schubert

This document compares the operation of two physically identical silicon p-n junction diodes with different n-side doping and lifetimes. The comparison includes the built-in voltage (vbi), depletion layer width (w), reverse saturation current (i0), and minority carrier profiles in the n-region for forward and reverse bias. Physical reasoning for the differences between the two diodes.

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ECSE-2210 Microelectronic Technology

Class Activity 14

1. Two silicon p+-n step junction diodes are physically identical except for the n-side doping

and the lifetimes. Compare the operation of the two diodes by answering the questions

below. Try to explain by using physical reasoning, rather than using formula (One or two

sentences are enough).

Diode #1 Diode #2

(a) Which diode will exhibit the larger built-in voltage, Vbi (also called the contact

potential)?

(b) Which diode will have a larger depletion layer width, W, for a given reverse bias?

both diodes)

(d) If the diodes are forward biased, qualitatively plot the minority carrier profiles in the n-

region of each diode (Your plot should show the differences between these two diodes).

p+ N

ND = 1014 cm–3

p = 2µs

p+ N

ND = 1016 cm–3

p = 1µs

Discover Assignments of Electrical and Electronics Engineering Rensselaer Polytechnic Institute (RPI)

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Download Comparison of Silicon p-n Junction Diodes: Voltage, Width, Current, and Carrier Profiles - and more Assignments Electrical and Electronics Engineering in PDF only on Docsity!

ECSE-2210 Microelectronic Technology Class Activity 14

Two silicon p+-n step junction diodes are physically identical except for the n-side doping and the lifetimes. Compare the operation of the two diodes by answering the questions below. Try to explain by using physical reasoning, rather than using formula (One or two sentences are enough).

Diode #1 Diode #

(a) Which diode will exhibit the larger built-in voltage, V bi (also called the contact potential)?

(b) Which diode will have a larger depletion layer width, W , for a given reverse bias?

(d) If the diodes are forward biased, qualitatively plot the minority carrier profiles in the n- region of each diode (Your plot should show the differences between these two diodes).

p +^ N N D = 10 14 cm–

τp = 2μs

p +^ N N D = 10 16 cm–

τp = 1μs

An abrupt Si p-n junction has the following properties at 300 K. Assume a junction area A = 1cm^2.

p-side n-side

N A= 2 × 10^17 cm–3^ N D = 3 × 10 15 cm–3^ D / μ= kT / q N D = 1 × 10 17 cm–3^ N A = 2 × 10 15 cm–

τn = 0.1 μs τp = 10 μs L = D τ

μp = 200 cm^2 /(Vs) μn = 1300 cm^2 /(Vs)

μn = 700 cm^2 /(Vs) μp = 450 cm^2 /(Vs)

a. Calculate the built-in voltage, V bi.

b. Calculate the reverse saturation hole current.

c. Calculate the reverse saturation electron current.

d. Find the total current under reverse bias.

e. Find the current I at a forward bias of 0.5 V.