Solid-State Electronics Homework 11 for ELEG 340, Fall 2008, Assignments of Solid State Physics

Information about homework 11 for the solid-state electronics course (eleg 340) at the university of delaware, fall 2008 semester. The homework includes two problems: calculating insulator capacitance, minimum capacitance, and flat band voltage for a given semiconductor, and calculating the open channel conductance for a transistor. Students are expected to submit their answers online, including their name, due date, and assignment number.

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Uploaded on 09/02/2009

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ELEG 340: Solid-State Electronics, Fall 2008
Homework #11 - due Tuesday, 2 December 2008, at the beginning of class
1. Problem 6.8, p. 327 of Streetman-Banerjee, 6th edition. Note, it may be written unclearly in the
problem description, but be sure to calculate the insulator (or oxide) capacitance Ci (also known as Cox),
and the minimum capacitance Cmin that occurs by including the series capacitance Cs of the
semiconductor depletion layer (also called Cd) at its maximum width. In the “next” part, calculate the
flat band voltage VFB using eqn (6-37) and the data in Fig. 6-17.
2. Calculate the open channel conductance GO for the transistor of problem 6.4, p. 327. Does the
conductance of the open n-type channel include a contribution from the p-type gate region?
Homework assignments will appear on the web at:
http://www.ece.udel.edu/~kolodzey/courses/eleg340f08.html
Note: On each homework and report submission, please give your name, the due date, assignment
number and the course number.

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ELEG 340: Solid-State Electronics, Fall 2008

Homework #11 - due Tuesday, 2 December 2008, at the beginning of class

  1. Problem 6.8, p. 327 of Streetman-Banerjee, 6th edition. Note, it may be written unclearly in the problem description, but be sure to calculate the insulator (or oxide) capacitance Ci (also known as Cox ), and the minimum capacitance C (^) min that occurs by including the series capacitance Cs of the semiconductor depletion layer (also called Cd) at its maximum width. In the “next” part, calculate the flat band voltage VFB using eqn (6-37) and the data in Fig. 6-17.
  2. Calculate the open channel conductance GO for the transistor of problem 6.4, p. 327. Does the conductance of the open n-type channel include a contribution from the p-type gate region?

Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg340f08.html

Note: On each homework and report submission, please give your name, the due date, assignment number and the course number.