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Homework Assignment 12 for ELEG 340: Solid-State Electronics, Fall 2008, Assignments of Solid State Physics

University of Delaware (UD)Solid State Physics

Information about homework assignment 12 for the course eleg 340: solid-state electronics, offered in the fall 2008 semester at the university of delaware. The assignment includes four problems related to mosfet (metal-oxide-semiconductor field-effect transistor) operation, based on the textbook 'streetman-banerjee' 6th edition. Students are required to solve problems 6.13, 6.19, 6.20, and 6.21, without using substrate bias and assuming vbs = 0. The due date for submission is december 10, 2008, at noon. The solutions and submission instructions can be found on the course website.

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ELEG 340: Solid-State Electronics, Fall 2008
Homework #12 (rev) - due Wednesday, 10 December 2008, at noon to the TA
1. Problem 6.13, p. 328 of Streetman-Banerjee, 6th edition.
2. Problem 6.19 (but no substrate bias), p. 329 of Streetman-Banerjee, 6th edition. Do not use substrate
bias - assume that VBS = 0 v.
3. Problem 6.20, p. 329 of Streetman-Banerjee, 6th edition.
4. Problem 6.21, p. 329 of Streetman-Banerjee, 6th edition. Hint: to assist you in selecting the correct
equation for the drain current, note that for VG = 5 volts and VD = 0.1 volt, show (from VDG) that the
MOSFET is in the linear region; for VG = 3 volts and VD = 5 volt, show that the MOSFET is in the
saturation region). Note added: assume that di = 10 nm, same as in problem 6.20 above.
Homework assignments will appear on the web at:
http://www.ece.udel.edu/~kolodzey/courses/eleg340f08.html
Note: On each homework and report submission, please give your name, the due date, assignment
number and the course number.

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Download Homework Assignment 12 for ELEG 340: Solid-State Electronics, Fall 2008 and more Assignments Solid State Physics in PDF only on Docsity!

ELEG 340: Solid-State Electronics, Fall 2008

Homework #12 (rev) - due Wednesday, 10 December 2008, at noon to the TA

  1. Problem 6.13, p. 328 of Streetman-Banerjee, 6th edition.
  2. Problem 6.19 (but no substrate bias), p. 329 of Streetman-Banerjee, 6th edition. Do not use substrate bias - assume that VBS = 0 v.
  3. Problem 6.20, p. 329 of Streetman-Banerjee, 6th edition.
  4. Problem 6.21, p. 329 of Streetman-Banerjee, 6th edition. Hint: to assist you in selecting the correct equation for the drain current, note that for VG = 5 volts and VD = 0.1 volt, show (from V (^) DG) that the MOSFET is in the linear region; for VG = 3 volts and VD = 5 volt, show that the MOSFET is in the saturation region). Note added: assume that di = 10 nm, same as in problem 6.20 above.

Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg340f08.html

Note: On each homework and report submission, please give your name, the due date, assignment number and the course number.