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Introduction-Electronics-Lecture Slides, Slides of Electronics
This lecture was delivered by Prof. Hussain Raza at B R Ambedkar National Institute of Technology for Electronics course. Its main points are: Course, Contents, Bi-Polar, Junction, Transistors, Construction, Collector, Base, Emitter, NPN, PNP
Typology: Slides
2011/2012
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Department of Electrical Engineering
Electronics-II
Course Book
“Electronic devices and Circuit Theory”
Robert L. Boylestad Louis Nashelsky 7 th^ to 9th^ Edition.
BJT (Bi-Polar Junction Transistors)
Phases of development of BJT
Year of Technology Device Invented Picture
1904 Vacuum tube diode
1906 Vacuum tube triode
1930 Vacuum tube Tetrode
1930 Vacuum tube Pentode
Year of Technology Device Invented Picture
December 23, 1947 Conventional first time built Transistor
Transistor construction
PNP Transistor
NPN Transistor
Transistor construction
The pnp transistor is drawn without the base-to-collector bias.
What happens to the BEJ and CBJ depletion regions?
Heavily doped
Lightly doped
Common-base Configuration
PNP Common-base Configuration
PNP Pointing iN
NPN Common-base Configuration
NPN
Not Pointing iN
Behavior study of Common-base BJT
To fully describe the behavior of a three-terminal device such as the common base amplifiers requires two sets of characteristics.
Output parameter side
Driving point or input parameters
Out put Parameters
The output set will relate an output current ( IC) to an output voltage (VCB) for various levels of input current ( IE)
I (^) E =
Cutt-off.
As inferred by its name, the cutoff region is defined as that region where the collector current is 0 A.
Saturation Region.
The saturation region is defined as that region of the characteristics to the left of VCB = 0V.
The exponential increase in collector current as the voltage VCB increases toward 0V.
In saturation region the BJT acts as closed switch which allows all the current to pass and Voltage across the BJT is very low.
Input parameters
The input set for the common-base amplifier will relate an input current ( IE) to an input voltage ( VBE) for various levels of output voltage (VCB).
BJT enters in the ON state (Saturation mode).