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October 200 5
2005 Fairchild Semiconductor Corporation BSS138 Rev C(W)
BSS138N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,high cell density, DMOS technology. These productshave been designed to minimize on-state resistancewhile provide rugged,performance.These products are particularly suited forlow voltage,servo motor control, power MOSFET gate drivers, and low current applications such as small reliable, and fast switching
other switching applications.
Features • • 0.22 A, 50 V. RHigh density cell design for extremely low RRDS(ON)DS(ON) = 6.0= 3.5ΩΩ @ V@ VGSGS = 10 V= 4.5 V DS(ON)
- • Rugged and ReliableCompact industry standard SOT-23 surface mountpackage
G
D S
SOT-
D
Absolute Maximum Ratings T A =25 oC unless otherwise noted G S
Symbol VVI D DSS GSS Drain-Source VoltageGate-Source VoltageDrain Current – Continuous– Pulsed Parameter (Note 1) Ratings 0.220.88± 5020 Units VVA
PTT J L D , T STG Maximum Power DissipationDerate Above 25Operating and Storage Junction Temperature RangeMaximum Lead Temperature for SolderingPurposes, 1/16” from Case for 10 Seconds°C (Note 1)^ −55 to +1500.36 300 2.8 mW/°°WCC°C
Thermal Characteristics R Package Marking and Ordering Information θJA Device Marking Thermal Resistance, Junction-to-Ambient Device Reel Size (Note 1) Tape width 350 Quantity °C/W
SS BSS138 7’’ 8mm 3000 units
BSS138 Rev C(W)
Electrical Characteristics SymbolOff Characteristics BV (^) DSS (^) Drain–Source Breakdown Voltage Parameter (^) VT (^) A (^) GS = 25°C unless otherwise noted = 0 V, Test Conditions I (^) D = 250 μA (^) Min 50 Typ Max Units V
∆I DSSBV ∆T DSSJ Breakdown Voltage TemperatureCoefficientZero Gate Voltage Drain Current IVVV D DS DS DS = 250 = 50 V,= 50 V, V= 30 V, μA,Referenced to 25 GS VV= 0 V T GS GS = 0 V= 0 V J = 125 °°CC 72 100 0.5 5 mV/μμnAAA°C
I On Characteristics V ∆ (^) GSS (^) GS(th)V ∆ GS(th)T (^) J Gate–Body Leakage.Gate Threshold VoltageGate Threshold VoltageTemperature Coefficient (Note 2) VVI (^) D (^) GS (^) DS = 1 mA,Referenced to 25 == V ±20 V,GS , VI (^) DS (^) D = 1 mA= 0 V (^) °C 0.8 1.3–2 ±1. (^1005) mV/nAV°C
R Ig D(on)FSDS(on) Static Drain–SourceOn–ResistanceOn–State Drain CurrentForward Transconductance VVVVV GS GS GS GS DS = 10 V,= 4.5 V,= 10 V, I= 10 V,= 10V, D = 0.22 A, TIIVI D D D DS = 0.22 A= 0.22 A= 0.22 A = 5 V J = 125 °C 0.120.2 0.71.01.10.5 3.56.05.8 ΩAS
Dynamic Characteristics CCCRissossrssG Input CapacitanceOutput CapacitanceReverse Transfer CapacitanceGate Resistance Vf = 1.0 MHzV (^) DS (^) GS = 25 V,= 15 mV, (^) f = 1.0 MHzV (^) GS = 0 V, 271369 pFpFpFΩ Switching Characteristics tttt (^) d(on) (^) r (^) d(off)f Turn–On Delay TimeTurn–On Rise TimeTurn–Off Delay TimeTurn–Off Fall Time (^) (Note 2) VV (^) DD (^) GS = 30 V,= 10 V, IR (^) D (^) GEN= 0.29 A, = 6 Ω 2.5 2097 1836145 nsnsnsns QQQ Drain–Source Diode Characteristics and Maximum Ratings I (^) S ggsgd Total Gate ChargeGate–Source ChargeGate–Drain ChargeMaximum Continuous Drain–Source Diode Forward Current (^) VV (^) DS (^) GS = 25 V,= 10 V I (^) D = 0.22 A, 1.70.10.4 (^) 0.222.4 nCnCnCA
Notes: 1. V^ SDRthe drain pins. Rθ^ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface ofDrain–Source Diode ForwardVoltageθJC is guaranteed by design while RθCA is determined by the user's board design.V^ GS^ = 0 V,^ I^ S^ = 0.44 A(Note 2)^ 0.8^ 1.4^ V
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Widtha) ≤ 350°C/W when mounted on aminimum pad.. 300 μs, Duty Cycle ≤ 2.0%
BSS138 Rev C(W)
Typical Characteristics
024
V^ , GATE-SOURCE VOLTAGE (V)GS 0 0.2 0.4 0.6 Qg , GATE CHARGE (nC) 0.8 1 1.2 1.4 1.6 1.
(^) I (^) D = 220mA VDS = 8V (^) 30V 25V (^20400)
CAPACITANCE (pF) (^0 10) VDS, DRAIN TO SOURCE VOLTAGE (V) 20 30 40 50 C (^) RSSC^ OSS^ CISS f = 1 MHzVGS^ = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.0010.010.
I^ , DRAIN CURRENT (A)D 0.1 VDS , DRAIN-SOURCE VOLTAGE (V) 1 DC 10 100
RSINGLE PULSER (^) DS(ON)θJAVT GS (^) A= 350 = 25 (^) = 10VLIMIToo (^) C (^) C/W 1s100ms10ms1ms^100 μs 012345 P(pk), PEAK TRANSIENT POWER (W) 0.001 0.01 0.1 (^) t 1 , TIME (sec) 1 10 100 1000
(^) SINGLE PULSERθJAT (^) A= 350°C/W = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse MaximumPower Dissipation.
0.1^1
r(t), NORMALIZED EFFECTIVE TRANSIENTTHERMAL RESISTANCE 0.0001 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 100 1000
TRRθJAθJA^ (t) = r(t) * R = 350o C/WθJA
0.20.050.10.020.01 SINGLE PULSE P(pk)Duty Cycle, D = tJ - T At 1 = P * Rt 2 θJA 1 (t) / t 2
D = 0.
Figure 11. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in Note 1a.Transient thermal response will change depending on the circuit board design.
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systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser. 2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms Advance Information Datasheet Identification Product Status Definition
Preliminary
No Identification NeededObsolete
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes at
any time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
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