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Electronic datasheet, Schemes and Mind Maps of Electronics

Mandalay Technological UniversityElectronics

Electronic parts datasheet for amatures and professionals

Typology: Schemes and Mind Maps

2018/2019

Uploaded on 11/25/2019

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JMnic Product Specification
Silicon PNP Power Transistors 2SA1491
DESCRIPTION
·With TO-3PN package
·Complement to type 2SC3855
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1 Base
2 Collector;connected to
mounting base
3 Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -140 V
VCEO Collector-emitter voltage Open base -140 V
VEBO Emitter-base voltage Open collector -6 V
IC Collector current -10 A
IB Base current -4 A
PC Collector power dissipation TC=25℃ 100 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -55~150 ℃
Fig.1 simplified outline (TO-3PN) and symbol
pf3
pf4

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Silicon PNP Power Transistors 2SA

DESCRIPTION

With TO-3PN package Complement to type 2SC

APPLICATIONS Audio and general purpose

PINNING

PIN DESCRIPTION

1 Base 2 Collector;connected tomounting base 3 Emitter

Absolute maximum ratings(Ta= )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -6 V I (^) C Collector current -10 A I (^) B Base current -4 A PC Collector power dissipation T (^) C=25 100 W T (^) j Junction temperature 150 T (^) stg Storage temperature -55~

Fig.1 simplified outline (TO-3PN) and symbol

Silicon PNP Power Transistors 2SA

CHARACTERISTICS Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage I (^) C=-50mA ;I (^) B=0 -140 V VCEsat Collector-emitter saturation voltage IC=-5A; I (^) B=-0.5A -2.0 V I (^) CBO Collector cut-off current VCB =-140V; I (^) E =0 -100 A I (^) EBO Emitter cut-off current VEB =-6V; I (^) C=0 -100 A hFE DC current gain I (^) C=-3A ; VCE=-4V 50 f (^) T Transition frequency I (^) C=0.5A ; VCE=-12V 20 MHz Switching times t (^) on Turn-on time 0.30 s t (^) s Storage time 0.90 s tf Fall time

I I C B1=-5A;R =- I B2 =-0.5AL =

V CC=60V

0.20 s

  • Silicon PNP Power Transistors 2SA