Main Memory, Slides of Technology

DRAM vs. SRAM. • Cycle time of SRAM 10 to 20 times faster than DRAM. • For same technology, capacity of DRAM 5 to 10 times that of SRAM.

Typology: Slides

2022/2023

Uploaded on 03/01/2023

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Main Mem.. CSE 471 Autumn 01 1
Main Memory
The last level in the cache – main memory hierarchy is the
main memory made of DRAM chips
DRAM parameters (memory latency at the DRAM level):
Access time: time between the read is requested and the desired
word arrives
Cycle time: minimum time between requests to memory (cycle
time > access time because need for stabilization of address lines)
Main Mem.. CSE 471 Autumn 01 2
DRAMs
Address lines split into row and column a ddresses. A read
operation consists of:
RAS (Row access strobe)
CAS (Column access strobe)
If device has been precharged, access time = RAS + CAS
If not, have to add precharge time
RAS, CAS, and Precharge are of the same order of magnitude
In DRAM, data needs to be written back aft er a read, hence cycle
time > access time
Main Mem.. CSE 471 Autumn 01 3
DRAM
array
Row
address
Column
address
page
Page buffer
Main Mem.. CSE 471 Autumn 01 4
DRAM and SRAM
D stands for dynamic
Each bit is single transistor (plus capacitor; hence the need to
rewrite info after a read).
Needs to be recharged periodically. Hence re freshing. All bits in a
row can be refreshed concurrently (just read t he row).
For each row it takes RAS time to refresh (c an lead to up to 5%
loss in performance).
S stands for static
Uses 6 transistors/bit (some use 4). No refresh a nd no need to write
after read (i.e., information is not lost by reading; ve ry much like a
F/F in a register).
Main Mem.. CSE 471 Autumn 01 5
DRAM vs. SRAM
Cycle time of SRAM 10 to 20 times faster than DRAM
For same technology, capacity of DRAM 5 to 10 times that
of SRAM
Hence
Main memory is DRAM
On-chip caches are SRAM
Off-chip caches (it depends)
DRAM growth
Capacity: Factor of 4 every 3 years (60% per ye ar)
Cycle time. Improvement of 20% per genera tion (7% per year)
Main Mem.. CSE 471 Autumn 01 6
How to Improve Main Memory Bandwidth
Its easier to improve on bandwidth than o n latency
Sending address: cant be improved (and this is latency)
Although split-transaction bus allows some ove rlap
Make memory wider (assume monolithic m emory)
Sending one address, yields transfer of more tha n one word if the
bus width allows it (and it does nowadays)
But less modularity (buy bigger increments of memory)
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Main Mem.. CSE 471 Autumn 01 1

Main Memory

• The last level in the cache – main memory hierarchy is the

main memory made of DRAM chips

• DRAM parameters (memory latency at the DRAM level):

  • Access time : time between the read is requested and the desired word arrives
  • Cycle time : minimum time between requests to memory (cycle time > access time because need for stabilization of address lines)

Main Mem.. CSE 471 Autumn 01 2

DRAM’s

• Address lines split into row and column addresses. A read

operation consists of:

  • RAS (Row access strobe)
  • CAS (Column access strobe)
  • If device has been precharged, access time = RAS + CAS
  • If not, have to add precharge time
  • RAS, CAS, and Precharge are of the same order of magnitude
  • In DRAM, data needs to be written back after a read, hence cycle time > access time

Main Mem.. CSE 471 Autumn 01 3

DRAM

array

Row address

Column address

page

Page buffer

Main Mem.. CSE 471 Autumn 01 4

DRAM and SRAM

• D stands for “dynamic”

  • Each bit is single transistor (plus capacitor; hence the need to rewrite info after a read).
  • Needs to be recharged periodically. Hence refreshing. All bits in a row can be refreshed concurrently (just read the row).
  • For each row it takes RAS time to refresh (can lead to up to 5% loss in performance).

• S stands for “static”

  • Uses 6 transistors/bit (some use 4). No refresh and no need to write after read (i.e., information is not lost by reading; very much like a F/F in a register).

DRAM vs. SRAM

• Cycle time of SRAM 10 to 20 times faster than DRAM

• For same technology, capacity of DRAM 5 to 10 times that

of SRAM

• Hence

  • Main memory is DRAM
  • On-chip caches are SRAM
  • Off-chip caches (it depends)

• DRAM growth

  • Capacity: Factor of 4 every 3 years (60% per year)
  • Cycle time. Improvement of 20% per generation (7% per year)

How to Improve Main Memory Bandwidth

• It’s easier to improve on bandwidth than on latency

• Sending address: can’t be improved (and this is latency)

  • Although split-transaction bus allows some overlap

• Make memory wider (assume monolithic memory)

  • Sending one address, yields transfer of more than one word if the bus width allows it (and it does nowadays)
  • But less modularity (buy bigger increments of memory)

Main Mem.. CSE 471 Autumn 01 7

Interleaving (introducing parallelism at the

DRAM level)

• Memory is organized in banks

• Bank i stores all words at address j modulo i

• All banks can read a word in parallel

  • Ideally, number of banks should match (or be a multiple of) the L block size (in words)

• Bus does not need to be wider (buffer in the DRAM bank)

• Writes to individual banks for different addresses can

proceed without waiting for the preceding write to finish

(great for write-through caches)

Main Mem.. CSE 471 Autumn 01 8

Banks of Banks

• Superbanks interleaved by some bits other than lower bits

• Superbanks composed of banks interleaved on low order

bits for sequential access

• Superbanks allow parallel access to memory

  • Great for lock-up free caches, for concurrent I/O and for multiprocessors sharing main memory

Main Mem.. CSE 471 Autumn 01 9

Limitations of Interleaving (sequential access)

• Number of banks limited by increasing chip capacity

  • With 1M x 1 bit chips, it takes 64 x 8 = 512 chips to get 64 MB (easy to put 16 banks of 32 chips)
  • With 16 M x 1 chips, it takes only 32 chips (only one bank)
  • More parallelism in using 4M x 4 chips (32 chips in 4 banks )

• In the N * m (N number of MB, m width of bits out of

each chip) m is limited by electronic constraints to about 8

or maybe 16.

Main Mem.. CSE 471 Autumn 01 10

Example Memory Path of a Workstation

CPU + L

L

Data switch

DRAM

Bank n

Bank 0

16B 32B

Processor bus

Memory bus

To/from I/O bus

Page-mode and Synchronous DRAMs

• Introduce a page buffer

  • In page mode no need for a RAS
  • But if a miss, need to precharge + RAS + CAS

• In SDRAM, same as page-mode but subsequent accesses

even faster (burst mode)

Cached DRAM and Processor in Memory

• Put some SRAM on DRAM chip

  • More flexibility in buffer size than page mode
  • Can precharge DRAM while accessing SRAM
  • But fabrication is different hence has not caught up in mass market

• Go one step further (1 billion transistors/chip)

  • Put “simple” processor and SRAM and DRAM on chip
  • Great bandwidth for processor-memory interface
  • Cache with very large block size since parallel access to many banks is possible
  • Can’t have too complex of a processor
  • Need to invest in new fabs