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These are the Lecture Slides of Advanced Device Simulation which includes Multi-Grid Method, Complexity of Linear Solvers, Sparse Cholesky, Poisson’s Equation, Iterative Methods, Multiple Scales, Coarse Structure, Red-Black Variations, Conjugate Gradients etc. Key important points are: Modeling Quantum, Coulomb Effects, Nanoscale Devices, Models Developed and Used, Discrete Impurities, Simulated Device Structures, Ferry’s Effective Potential Approach, Quantum Field Approach
Typology: Slides
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Nanostructures Research Group Arizona State University
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(1) Corrected Coulomb Approach (2) P^3 M Algorithm (3) Fast Multipole Method (FMM)
(1) Ferry’s Effective Potential Method (2) Quantum Field Approach
Statistical Enhancement: Event Biasing Scheme
Short-Range Interactions and Discrete/Unintentional Dopants
Quantum Mechanical Size-quantization Effects
Boltzmann Transport Equations (Particle-Based Monte Carlo Transport Kernel)
Long-range Interactions (3D Poisson Equation Solver)
In principle, the effective role of the potential can be written in terms of the non-local density as:
where the summation over i is a summation over the carriers themselves. The finite size of the electron has been replaced by smoothing of the real potential.
dxdydz a
z z a
y y a
x x V x y z a a a
V x y z x y z x y z
2 2
2 2
2 eff (^322)
( , , )exp ( 2 )
In three dimensions:
D.K. Ferry, “The onset of quantization in ultra-submicron semiconductor devices”, Superlattices and Microstructures, 27, 61, (2000).
Quantization energy
Charge set-back - quantum capacitance effect
Built-in potential for triangular po- tential approxima- tion.
Effective potential approximation
Derivation of Thermodynamic Quantum Potential Approach:
3
3
2
( ) , 2 , exp , 2 2
( ) , exp ,
quant eq eq
eq eq eq
eq eq
a f x p x x i p d
b x y F x y
c V m
2 , exp 2
class eq
p f x p e V x m
3
2 exp , , 2 3 , exp 2 2 2
p (^) e V Q (^) x p eq x x i p d m
Classical:
Quantum Mechanical:
C. Ringhofer, C. Gardner and D. Vasileska, “Effective potentials and quantum fluid models: A thermodynamic approach,” Inter. J. on High Speed Electronics and Systems 13, 771, 2003.
The Quantum Barrier Field:
2 2
2 2
2 sin , , exp 2 8
1,0, 2
2 sinh 2 , , 1,0,0 exp 2 8
(^)
y
T B x Q x B B x T B x z
y y Q T^ y^ i^ y B y y y
e V x B y p m V x p m V x m p B e V
p m B m e V x p e d m p
The barrier potential VB ( x ) is a step function which takes into account the discontinuity at the Si/SiO 2 interface due to the difference in the semiconductor and the oxide affinities.
The fact that we have to calculate this integral only once is a reason why we should decide to tabulate the result in the very beginning.
The Hartree Field:
Hartree potential is expanded using the assumption that it is slowly varying function in space. In that case, one can write:
2 2 2 2 2 ( , , , ) 1 24 2 exp 8 ( , ) Q x x H H
p V x p t V x t m m
where:
2 2 (^0) , exp , 8
x
(^2 2 ) 0 0 2 , 1
r r 24
Q n n n n n n x H x H j k j k r H j k
V x p t V x t p p x x x V x t n N m
Then, the Hartree Field is computed using:
S. Ahmed, C. Ringhofer, D. Vasileska, “Parameter–Free Effective Potential Method for Use in Particle–Based Device Simulations”, IEEE Transactions on Nanotechnology , in press, 2005.
Model Verification:MOS capacitor
Quantization energy
Charge set-back - quantum capacitance effect
Built-in potential for triangular po- tential approxima- tion.
Effective potential approximation
2.0E+
4.0E+
6.0E+
8.0E+
1.0E+
1.2E+
1.4E+
1.6E+
1.8E+
2.0E+
0.8 1 1.2 1.4 1.6 1.8 2 2. Gate Voltage [V]
Sheet Electron Density [cm
-2]
Classical SCHRED New Ferry
N (^) A = 10^18 cm- T (^) ox = 1.5 nm
Adjusting a 0 or the form/shape of the wave packet can improve the situation
Basic idea:
Short-range force is calculated directly from first principles by the implementation of a MD routine and then combined with the Long-range forces found from the mesh.
To avoid double counting:
The corrected Coulomb force is obtained by pre-computing the mesh force from a single ion and then subtracting it from the Coulomb force. This corrected force is then added to the actual mesh force obtained during the real simulation to get the total force.
ion
1
2
elec
1
2
2
N
k (^) i k
k ik
N
j (^) i j
Coul ij i
mesh i
Coul i
corr
mesh i
corr i
total
(Precomputed)
D. Vasileska, W. J. Gross and D. K. Ferry, “Monte-Carlo particle- based simulations of deep-submicron n-MOSFETs with real- space treatment of electron-electron and electron-impurity interactions”, Superlatt. Microstruct ., Vol. 27, pp. 147-157 (2000).
Target electron (^) Fixed electron
ij
Coul ij
corr Fij F R
Reference force replaces the mesh force and needed to avoid double counting of the short-range force. The reference force should be equal to the mesh force inside the SR domain and equal to the Coulomb force outside the short-range domain.
Smoothing of the total interparticle force between the long-and short-range domains can be thought of as ascribing a finite size to particle i. A sphere with uniformly decreasing density profile, S ( r ) is a good choice for smoothing in three dimensions.
2
1 4
( ) r
qq Rij r i j
(^) 0 , ,
, / 2 2
48 (r )^4 otherwise
r r r
r S (^) r sr
sr sr
( 224 224 70 48 21 ) 35
1 4
( ) 2 ^3 ^4 ^5 ^6
sr
i j ij (^) r
qq R r
(^1222489684022470487 ) 35
1 4
( ) 2 2 ^2 ^3 ^4 ^5 ^6
sr
i j ij (^) r
qq R r
0 r rsr 2
rsr 2 r r sr
r r sr
r sr ^2 r and
2
1 4
( ) r
qq Rij r i j
(^) 0 , ,
, / 2 2
48 (r )^4 otherwise
r r r
r S (^) r sr
sr sr
( 224 224 70 48 21 ) 35
1 4
( ) 2 ^3 ^4 ^5 ^6
sr
i j ij (^) r
qq R r
(^1222489684022470487 ) 35
1 4
( ) 2 2 ^2 ^3 ^4 ^5 ^6
sr
i j ij (^) r
qq R r
0 r rsr 2
rsr 2 r r sr
r r sr
r sr ^2 r and
(^) 0 , ,
, / 2 2
48 (r )^4 otherwise
r r r
r S (^) r sr
sr sr
( 224 224 70 48 21 ) 35
1 4
( ) 2 ^3 ^4 ^5 ^6
sr
i j ij (^) r
qq R r
(^1222489684022470487 ) 35
1 4
( ) 2 2 ^2 ^3 ^4 ^5 ^6
sr
i j ij (^) r
qq R r
0 r rsr 2
rsr 2 r r sr
r r sr
r sr ^2 r and
R. W. Hockney and J. W. Eastwood, Computer Simulation Using Particles (New York, McGraw-Hill, 1981).
Central Strategy of the FMM: How does the FMM speed up the computation?
In FMM one uses multiples moments to represent distant particle groups and introduces a local expansion to evaluate the contribution from distant particles in the form of a series. The multipole moment associated with a distant group can be translated into the coefficient of the local expansion associated with a local group. Interactions with particles which are nearby are handled directly.
distant particles local particles
distant particles local particles
multipole moment local expansion
local point
translation
1
1 1
1 1
1
N i i i N p i k i k i k p (^) N k i k i k i p k k k
L.Greengard and V. Rokhlin , “ A Fast Algorithm for Particle Simulations”, J. Comp. Phys. V. 135, 280-292 (1997).
Consider a two-dimensional (2D) physical model which consists of a set of N charged particles. Suppose that a point charge of unit strength is located at the point
is described by the expressions
for every harmonic function u, there exists an analytic function w : such that
of this discussion we will work with analytic functions, to simplify notation, making no
corresponding force field is given by
where w is the derivation of w.
z z 0 ,
1
log log.
k z k
z z q z z q z k z
Suppose that
0 0 (^1 )
log k k k
a z a z z z z
is a multipole expansion of the potential due to a set of m charges of strengths
q 1 (^) , q 2 ,..., qm , all of which are located inside the circle D of radius R with center at z 0_._
1
log ll , l
b z a z z
where
0 0 0 1
l l l k l k k
l (^) a z b a z k (^) l
with
l k
the binomial coefficients.
LEMMA 4. Suppose that m charges of strengths q 1 (^) , q 2 ,..., qm are located inside the circle
corresponding multipole expansion converges inside the circle D 2 of radius R centered
about the origin. Inside D 2 , the potential due to the charges is described by a power
series,
0
l l^ , l
z b z
where,
(^1 )
1 log k^ k k k
a b a z z
and
0 1 0 0
p (^) k k l (^) l k l k
a l^ k a b for l z (^) z k l z
3+5. M2L translation and Evaluation