Expermient (E3)
Section : 6
Group : 17
ميحرلا دبع ركاش ماصع نمحرلا دبع
نمؤم نمحرلادبعفطاع سابع
ميهاربا دمحم نمحرلادبعليلخ
رونا دمحم نمحرلادبعهللادبع دمحا
نيسح دمحم نمحرلادبع دمحا
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view the change in output before changing BJT Characterization
Typology: Lab Reports
2019/2020
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Expermient (E3)
Section : 6
Group : 17
** npn-BJT Transistor Characterization.
Circuit as shown in Fig(3.7).
- The adjustment of β to x = 132.
The graph VBB (v1) is changing vs IC.
- The theoretical behavior VBB = IB × 100k + VBE IC = β IB = 132 IB VBE = 0.7 V VBB – 0.7 = IC × 13.2M
- Ic vs VCE (3 values of IB )
- Definition of regions: A. Cut off mode: Ic = IB = IE = 0 (transistor acts as O.C ). (the red line on the graph)