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The topics of p-n junction capacitance and contacts in ece 440 lectures. It explains why fixed charge is stored in the junction during reverse bias, how the width (w) changes with voltage, and how to determine the doping concentrations of the two sides based on the slope and intercept of 1/cj vs. Voltage. The document also discusses the importance of metals in semiconductor devices and the differences between schottky and ohmic contacts.
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P-N Junction Capacitance; Contacts In reverse bias (V<0) fixed charge is stored in the junction, as the depletion width widens with more negative V. Why? How does W change with voltage? W A dV dQ C (^) J s If I measure and plot 1/ CJ 2 vs. V, I can get ______________ ( ) 1 2 2 0 2 2 J V V A Aq N W C (^) s S ^
Example: Given the slope (1/CJ) 2 vs. voltage is -2e23 F
Another scenario, if Φm < Φs Example: calculate semiconductor work function q Φs if it is silicon doped p-type with NA = 10 17 cm
Two types of metal-silicon contacts become apparent:
Ohmic contact on silicon. Two ways to achieve them:
