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Material Type: Exam; Class: SOLID-STATE DEVICES; Subject: Electrical Engineering; University: University of California-Riverside; Term: Unknown 1989;
Typology: Exams
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EE 203. Final For k (^) B T at 300K, use 26 meV. Use material parameters from attached tables and figures from Sze.
a. (10 pts) Sketch the charge distribution. Label maximum and minimum points.
b. (10 pts) Sketch the electric field. (εSi = 11.9 & εSiO 2 = 3.9) Label max and min points.
c. (10 pts) Sketch the electrostatic potential. Label max and min points.
d. (10 pts) Sketch the band diagram. (E (^) G SiO2 = 9 eV. Ec(Si0 2 ) – Ec(Si) = 3eV) (you will not be able to draw it to scale)
-xp 0 tox xn + tox
x
ρ
-xp 0 tox xn + tox
-xp 0 tox xn + tox
-xp 0 tox xn + tox
(g) (30 pts) Calculate the capacitance in (F/cm 2 ).
(b) Auger recombination (b.1) (10 pts) First describe what Auger recombination is and illustrate the process on a band diagram.
(b.2) (10 pts) Why does Auger recombination increase as the emitter doping increases?
(b.3) (10 pts) Now describe how Auger recombination affects the figures of merit, αT, γ, and βF, and thus device performance.
a. (10 pts) DIBL
b. (10 pts) Velocity saturation