Semiconductor device , Slides of Physics of semiconductor devices

Lecture slides on the book solid state electronics device by Ben G Streetman

Typology: Slides

2017/2018

Uploaded on 03/23/2018

3232018
3232018 🇧🇩

1 document

1 / 42

Toggle sidebar

This page cannot be seen from the preview

Don't miss anything!

bg1
반반반 반반반반
Semiconductor
Devices
(DISP 7023-00)
Prof. Min-Koo Han
010-5225-7248
Class Hour : Monday 9:00 – 11:45 AM
Class Room : 이이이 #110
Office : Room #114 at 이이이
Text : Solid State Electronic Devices(7th
Edition)
Ben G. Streetman
Midterm : 40% Final : 45% Homework and Others :
15%
1
pf3
pf4
pf5
pf8
pf9
pfa
pfd
pfe
pff
pf12
pf13
pf14
pf15
pf16
pf17
pf18
pf19
pf1a
pf1b
pf1c
pf1d
pf1e
pf1f
pf20
pf21
pf22
pf23
pf24
pf25
pf26
pf27
pf28
pf29
pf2a

Partial preview of the text

Download Semiconductor device and more Slides Physics of semiconductor devices in PDF only on Docsity!

Semiconductor

Devices

(DISP 7023-00)

Prof. Min-Koo Han

[email protected]

010-5225-

Class Hour : Monday 9:00 – 11:45 AM

Class Room : 이이이 #

Office : Room #114 at 이이이

Text : Solid State Electronic Devices(7th

Edition)

Ben G. Streetman

Intrinsic Carrier Concentration

*** For Si,**

N

C

=2.75x

19

cm

-

N

V

=1.30x

19

cm

-

  • For GaAs,

N

C

=4.33x

17

cm

N

V

=8.05x

18

cm

Current characteristic versus time during

diode switching

Charge Storage and Diode Transient

p

+

n Junction

p

p

p

x

J

t e

p

 

 1

Integration from 0 to

0

( 0 ) ( ) ( )dx

t

p p

J J e

p

p p

0

Q ( t ) eA pdx

p

dt

Q t dQ t

i t A J

p

p

p

p

When t=0, I

r

=

at x=

x 0

n

p (t)

The Turn-off Transient

p

f p

p

s

I

Q s

( ) [exp( ) 1 ]

n no a t

t

p f p

p t p V V

Q t I e

p

p f p

p

p

sQ s I

Q s

Metal-Semiconductor Contact ; before contact

Work Function -

Electron Affinity -

M S

,

Vacuum Level

Ideal Metal-Semiconductor Contact ( I )

M S

  

Rectifying Contact

- Schottky Diode

Φ

B

= Φ

M

Schottky model

(1931)

Current Flow in Schottky Diode

Forward Bias Reverse Bias

( 1 )

**/ /

  • 2**

  

  k T q V k T

D

B A

I A A T e e

B

dominant

I

R-G

negligible

M n-Si

The Schottky Barrier Diode

Qualitative Characteristics

(a) Idealized equilibrium band

diagram (energy versus distance)

for a metal semiconductor

rectifying contact

(Schottky barrier).

(b) Charge at an idealized metal-

semiconductor junction.

The negative charge is

approximately a delta function at

the metal surface.

The positive charge consists

entirely of ionized donors (here

assumed constant in space) in

the depletion approximation.

(c) Field at an idealized metal-

semiconductor junction.

Qualitative Characteristics

Small signal capacitance

sin(wt)

V

R

M

S

-Q

+Q

2 ( )

'

bi R

s d

R

n

d

V V

eN

dV

dx

C eN

 

s d

bi R

eN

V V

C 

2

slope=2/(eε

s

N

d

)

Bn bi n

  V 

Ideal Junction Properties

R

dV

d Q

C

1 2

2 ( ) 1

/

d a d

s bi R a

n

N N N

N

e

ε V V

x

 

R

n

d

R

dV

dx

eN

dV

d Q

C 

1 2

2 ( )( )

/

bi R a d

s a d

V V N N

eε N N

C

 

In the case of PN

In the same way with PN

Ideal Junction Properties

Nonideal effects on the Barrier Height

eE

x

e

F

s

2

2

x

e

x

x

e

x

x

e

x E x dx

s

s

s

potentialenergyof electron:-e ( )

2

Ex

x

e

x

s

Barrier lowering

position of maximum barrier, x

m

s s

m

eE

E

e

x

Electric field in

dielectric

0

( ( ))

dx

d e  x

Nonideal effects on the Barrier Height