EECS105 Midterm 2 Exam for Electrical Engineering and Computer Sciences Students, Exams of Microelectronic Circuits

A midterm exam for the eecs105 course offered by the university of california, berkeley's department of electrical engineering and computer sciences. The exam covers various topics related to transistor amplifiers, including transconductance amplifiers, bode plots, and small-signal models. Students are required to answer multiple-choice and problem-solving questions, and are allowed to use their notes during the exam.

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UNIVERSITY OF CALIFORNIA
College of Engineering
Department of Electrical Engineering
and Computer Sciences
Professor Oldham Spring 1999
EECS105 — Midterm 2
Thursday, 8 April 1999
Your name: ______________ ____________________
Your discussion TA: Allan Chang Lily Tam
This is a closed book exam, but you may use your 2 pages of notes.
Please do all your work on the pages of this exam. Ask if you need extra paper.
Full credit will be given only when you indicate the source of your answer, such as a table, graph, or calcula-
tion.
Please write your name in the above space
SPECIAL NOTES:
1. QUESTIONS: Because it is disturbing to others in the exam when we pass by to answer questions, we must
ask you to please limit your questions. Re-read the exam question and be sure that the data or equation you
need is not already provided.
2. GRAPHS AND FORMULAS PROVIDED: At the back of the exam are several pages of formulas, and data
in the form of graphs. Please look for information here rather than asking a question.
3. SOME PARTS OF THE EXAM ARE GRADED WITH NO PARTIAL CREDIT. They are noted. You may
wish to double check your answers on those parts.
4. DEVICE PROPERTIES: Unless otherwise specified, assume n-channel transistors have
, and p-channel transistors have . In
small-signal calculations assume a lambda of 0.05 for both types. Assume bipolar transistors have beta of
100 and of 10-15 A (both npn and pnp transistors). In small-signal calculations assume the Early volt-
age is 20 V. You are to ignore lambda and Early voltage in biasing calculations.
SCORE
Problem 1 (15 pts.)
Problem 2 (15 pts.)
Problem 3 (20 pts.)
Problem 4 (25 pts.)
Problem 5 (25 pts.)
TOTAL (100 pts.)
first last
Yes, I have looked these over. (Check box)
Vtn 0.5 V µCox
,50µA/V2
== Vtp 0.5– VµCox
,25µA/V2
==
IES
pf3
pf4
pf5
pf8
pf9
pfa
pfd

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UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences

Professor Oldham Spring 1999

EECS105 — Midterm 2

Thursday, 8 April 1999

Your name: ______________ ____________________

Your discussion TA: r Allan Chang r Lily Tam

- This is a closed book exam, but you may use your 2 pages of notes. - Please do all your work on the pages of this exam. Ask if you need extra paper. - Full credit will be given only when you indicate the source of your answer, such as a table, graph, or calcula- tion. - Please write your name in the above space - SPECIAL NOTES: 1. QUESTIONS: Because it is disturbing to others in the exam when we pass by to answer questions, we must ask you to please limit your questions. Re-read the exam question and be sure that the data or equation you need is not already provided. 2. GRAPHS AND FORMULAS PROVIDED: At the back of the exam are several pages of formulas, and data in the form of graphs. Please look for information here rather than asking a question. 3. SOME PARTS OF THE EXAM ARE GRADED WITH NO PARTIAL CREDIT. They are noted. You may wish to double check your answers on those parts. 4. DEVICE PROPERTIES: Unless otherwise specified, assume n-channel transistors have , and p-channel transistors have. In small-signal calculations assume a lambda of 0.05 for both types. Assume bipolar transistors have beta of 100 and of 10-15 A (both npn and pnp transistors). In small-signal calculations assume the Early volt- age is 20 V. You are to ignore lambda and Early voltage in biasing calculations. SCORE Problem 1 (15 pts.) Problem 2 (15 pts.) Problem 3 (20 pts.) Problem 4 (25 pts.) Problem 5 (25 pts.) TOTAL (100 pts.)

first last

Yes, I have looked these over. (Check box)

Vtn = 0.5 V , μCox = 50 μA/V 2 Vtp = – 0.5V , μCox = 25 μA/V^2

IES

1 of 8

Problem 1 (15 pts., NO Partial Credit)

You buy three voltage amplifiers with the following specifications:. You hook

them up in series (i.e., output 1 = input 2, etc.), and place them in a black box. You are going to sell this box as a transconductance amplifier. What are the specifications of the transconductance amplifier?

Problem 2 (15 points)

a. Find the phasor representing the ratio of short-circuit output current to input current for the following circuit:

b. What is the general shape of the frequency response? Sketch magnitude vs frequency on dB scale provided on pg. 2.

Rin = 10 5 , Rout = 10 5 , A = 10

A 1 A 2 A 3

transconductance amplifier

Gm = _____________

Rin = _____________ Rout = _____________

v 2

i 1

iIN R 1 C g^2 V^2 2

βi 1 R iOUT L

R 2

A 1

I out ≡ ------- I in- =___________________________________________

3 of 8

Problem 3 (20 points)

Sketch the Bode plot on the graphs provided for the following function. Please show your work. (Neatness and clarity are important.) Only straight-line approximations are wanted.

F

200 jω 1 jω 200

× +---------

= ( --------------------------------------------------------------------------------------- 2 +jω) ( 1 + 100 jω) ( 1 +0.0002jω)-

4 of 8

Problem 3 Worksheet

6 of 8

Problem 4 Worksheet

7 of 8

Problem 5 (25 points)

a) You are given one “power nMOS” transistor and need to construct a transistor circuit to drive an 8 ohm

speaker through a coupling capacitor. (The “power nMOS” transistor has a 1V threshold, a of , and. The source is connected to the body internally.) Your circuit should have a voltage gain of about 0.5 at higher frequencies (that is, at frequencies high enough that the impedance of is negli- gible). (Note that must be quite large to have a good low frequency response.) The bias current source you have available is essentially ideal (i.e., infinite parallel resistance). You choose the circuit below.

a) Draw the small-signal model for this amplifier in the box opposite, ignoring all internal device capacitances and parasitic resistances.

b) Solve for the “mid-band” gain (formula in terms of circuit and device parameters). The mid-band gain is

a real quantity. It is the gain at frequencies high enough that coupling capacitors act as shorts, yet the fre- quency is low enough that capacitors to ground are negligible.

c) Find the mid-band gain of the circuit at a bias current of.

C X W ⁄ L 104

μCox = 50 μA/V^2 C (^) X C (^) X

8 Ω speaker

V (^) DD (^) C X I BIAS

R (^) S

v (^) S

100 KΩ

A M

A M = ____________

A (^) M I BIAS =10 mA

A M =____________

A.

Appendix A:

A.

Appendix B:

A.

(EQ 6.10)

(EQ 6.22)

(EQ 6.30)

(EQ 6.31)

(EQ 6.48)

Appendix D: Values

Appendix E: SIA unit multipliers:

φB V (^) thln

p (^) po p (^) no  -------^ and^ φB^ V^ thln^

n (^) no n (^) po

p (^) n ( x (^) n) = p (^) no ⋅ e V^ D^ ⁄^ V^ th and n (^) p ( – x (^) p) = n (^) po e V^ D^ ⁄V^ th

J qn (^) i^2

D (^) p N (^) d W (^) n

D (^) n N (^) a W (^) p

=  + --------------^ (e V^ D^ ⁄^ V^ th– 1 )

I (^) D qn (^) i^2 A

D (^) p N (^) d W (^) n

D (^) n N (^) a W (^) p

= (^)  + --------------^ ( e V^ D^ ⁄^ V^ th– 1 ) =I (^) o ( e V^ D^ ⁄^ V^ th– 1 )

C (^) j

C (^) jo 1 – V (^) D ⁄φB

q =1.6 × 10 –^19 C

V (^) t = kT ⁄ q = 0.026 V

ε 0 = 8.85 × 10 –^14 F ⁄cm

εoxide = 3.9ε 0

εSi = 11.7ε 0

M = 10 6

K = 10 3

m = 10 –^3

μ = 10 –^6

n = 10 –^9

p = 10 –^12

f = 10 –^15