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The third homework assignment for ece 250, a course focused on semiconductor devices and circuits. The assignment includes five problems related to gaas diodes, circuit analysis, and semiconductor properties. Students are asked to plot graphs, find diode voltage and current, and analyze circuit behavior.
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Problem 1: A GaAs PN junction diode has a donor doping concentration of Nd=10^16 /cm^3 and an acceptor doping concentration of
Na=10^16 /cm^3. Plot the built-in barrier potential for this diode for temperatures from 0 °C to 70 °C. Should the y-axis be plotted in a log scale? Why or why not?
Problem 2: For the circuit below, find the diode voltage and current using: a) Iteration b) Maple or MathCAD. c) PSpice. See section 3.C in the PSpice manual for an example. For the diode let Is = 3.7× 10 -14^ A and η=1.2. In PSpice, the model parameter for η is N.
Vin 15 V
D
R
1k
R 5k
Problem 3:
a) By hand, plot Vo(t) and Vin(t) for the circuits below. Let Vin be a +/- 15 Volt triangle wave. b) By hand, plot the transfer curve Vo versus Vin for the circuits below. You may assume that the diodes are ideal.
Circuit 1
D
D
D
R
1k
R
1k
R
Vin
Circuit 2
R
1k
D
R
Vin
D
R 1k
Circuit 3
R
1k
Vin D
R 3k
D
D
R
1k
D
Problem 4: Use PSpice to plot Vo(t) and Vin(t) versus time for the circuits of problem 4. Let Vin(t) be a +/- 15 Volt triangle wave. Plot both traces on the same plot. You will need to use Probe to generate these plots. See Chapter 2 of the PSpice manual for examples using Probe. See Section 6.F of the PSpice manual for an example. Use the following parts: Vtri, R, and D_ideal. Make sure that you use part 0 for ground.
Problem 5: Answer the following questions: a. What is an intrinsic semiconductor. b. What is an extrinsic semiconductor. c. What are impurities used for in semiconductors. d. What is a donor impurity. e. What does it mean to dope a semiconductor. f. What is an n-type semiconductor. g. What is an acceptor impurity. h. What is a p-type semiconductor. i. What is the equation for the intrinsic carrier concentration and what does it mean? j. What is the concentration of electronics in a semiconductor doped with a donor impurity? k. What is the concentration of electronics in a semiconductor doped with an acceptor impurity?