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Professor Miller, Manchester Metropolitan University, Electrical Engineering, Analogue Electronics Digital Electronics, 2000 2001 Exam, FACULTY OF SCIENCE AND ENGINEERING, NPN bipolar transistor, nearest preferred value (NPV), Bipolar Junction Transistor.
Typology: Exams
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Exam ination for th e BEng (H O NS) ELECTR ICA LAND ELECTR O NIC ENGINEER ING H ND ELECTR O NIC ENGINEER ING YEA R O NE
Th ursday 24 May 2001
2.00 pm to 4.00 pm
Instructions to Candidates A nsw er FO UR questions, TW O from EACH section.
continued
(i) th e value of R 3 assum ing IE=IC; [2]
(ii) suitab le values for R 1 and R 2 assum ing h (^) FE(MIN)=200 and VBE=0.7V for th e transistor; [4]
(iii) a new value of R 3 to ob tain m axim um output sw ing. [4]
(b ) R 2 is now rem oved from th e circuit and R 1 is replaced by a 2MΩ resistor. Using th e originalvalue for R 3 found in (a) ab ove, calculate th e quiescent voltages at th e collector and em itter assum ing h (^) FE=300 and VBE=0.7V. Briefly explain w h y th is circuit is less desirab le th an th e original. [15]
Figure Q 1
(b ) Explain w h at is m eant by th e term ‘virtualearth ’w h en applied to an operationalam plifier circuit. [3]
(c) D raw th e circuit diagram of a differentialam plifier and derive an expression for th e output voltage in term s of th e input voltages and resistances in th e circuit. [16]
1k Ω
Vcc = 20V
