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Microelectronics Technology – Class Activity | ECSE 2210, Assignments of Electrical and Electronics Engineering

Rensselaer Polytechnic Institute (RPI)Electrical and Electronics Engineering
Prof. E. Fred Schubert

Material Type: Assignment; Professor: Schubert; Class: MICROELECTRONICS TECHNOLOGY; Subject: Electrical & Comp. Sys. Engr.; University: Rensselaer Polytechnic Institute; Term: Spring 2006;

Typology: Assignments

Pre 2010

Uploaded on 08/09/2009

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koofers-user-qkh 🇺🇸

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ECSE-2210 Microelectronics Technology
Class Activity 19
1. The base region in a BJT is narrow. What is the precise definition of “narrow”?
2. Why is it necessary for the base region of a BJT to be narrow?
3. Complete the table below by indicating the polarity (+ or -) of the input and output voltages
associated with each of the four biasing modes for the npn transistor.
npn BJT
Mode VBE VBC
Active
Inverted
Saturation
Cutoff
4. Consider a Si pnp BJT with NAE = 5 × 1017 cm-3, NDB = 1015 cm-3, and NAC=1014 cm-3.
a. Calculate the equilibrium majority and minority carrier concentrations in the emitter,
base and collector of the transistor. Plot them in the figure below.
5 × 1017 cm-3 1015 cm-3 1014 cm-3
P N P
W
B
W
B
x
pf2

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ECSE-2210 Microelectronics Technology Class Activity 19

  1. The base region in a BJT is narrow. What is the precise definition of “narrow”?
  2. Why is it necessary for the base region of a BJT to be narrow?
  3. Complete the table below by indicating the polarity (+ or -) of the input and output voltages associated with each of the four biasing modes for the npn transistor.

npn BJT Mode (^) V BE V BC Active

Inverted Saturation Cutoff

  1. Consider a Si pnp BJT with N AE = 5 × 10 17 cm-3^ , N DB = 10^15 cm-3^ , and N AC =10 14 cm-^.

a. Calculate the equilibrium majority and minority carrier concentrations in the emitter, base and collector of the transistor. Plot them in the figure below.

5 × 10 17 cm-3^1015 cm-3^1014 cm- P N P

WB

WB x

b. Roughly sketch (qualitative) the carrier distribution (both holes and electrons) in the base, emitter and collector of this transistor under forward active biasing mode when W / L p >> 1.

c. Repeat part b when W / L p << 1. (Note: part b corresponds to a back-to-back diode whereas part c corresponds to a real transistor).

5. What are the typical values for γ, αT, αdc and βdc? What do these symbols stand for?

W B

WB (^) x