Microelectronics Technology - Assignment 17 Questions | ECSE 2210, Assignments of Electrical and Electronics Engineering

Material Type: Assignment; Professor: Schubert; Class: MICROELECTRONICS TECHNOLOGY; Subject: Electrical & Comp. Sys. Engr.; University: Rensselaer Polytechnic Institute; Term: Unknown 2006;

Typology: Assignments

Pre 2010

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ECSE-2210 Microelectronics Technology
Class Activity 17
1. What is the root cause of the delay in switching from the on-state to the off state?
2. Name the two mechanisms that act to remove the stored excess charge during the turn-off
transient.
3. An ideal p+-n diode carrying a forward current IF is suddenly reverse biased such that a
current IR flows through it at t = 0+. The storage time measured was ts. Determine what
happens to ts (increase or decrease) if:
a. Only IF is increased.
b. Only |IR| is increased.
c. The hole lifetime,
τ
p, is increased.
4. a. An ideal p+-n diode carrying a forward current IF is suddenly open circuited at
t = 0. Sketch the expected variation of pn(x, t) versus x at progressively increasing times
after open circuiting the diode.
b. Repeat the same if the diode above is reverse biased at t = 0 such that a current IR flows
through it at t = 0+.
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ECSE-2210 Microelectronics Technology Class Activity 17

  1. What is the root cause of the delay in switching from the on-state to the off state?
  2. Name the two mechanisms that act to remove the stored excess charge during the turn-off transient.
  3. An ideal p+-n diode carrying a forward current I F is suddenly reverse biased such that a current I R flows through it at t = 0+. The storage time measured was t s. Determine what happens to t s (increase or decrease) if:

a. Only I F is increased.

b. Only | I R| is increased.

c. The hole lifetime, τp , is increased.

  1. a. An ideal p+-n diode carrying a forward current I F is suddenly open circuited at t = 0. Sketch the expected variation of p n ( x , t ) versus x at progressively increasing times after open circuiting the diode. b. Repeat the same if the diode above is reverse biased at t = 0 such that a current I R flows through it at t = 0 +.
  1. The hole lifetime of a p +-n junction diode is measured by the diode recovery method. When the applied voltage is as shown in figure, the current through the diode was as shown. Determine the hole lifetime.

p+^ n

V (t)

R =10 kΩ

V ( t )

10 V

20 V

t

i ( t )

t

30 ns